Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Vaibhav Purwar"'
Publikováno v:
Veterinary World, Vol 10, Iss 12, Pp 1407-1412 (2017)
Aim: The objective of this study was to evaluate the effects of protected fat plus yeast, niacin, zinc, and chromium dietary supplementation on the reduction of heat stress in Karan Fries (KF) heifers during hot humid months. Materials and Methods
Externí odkaz:
https://doaj.org/article/fa9e6cf1b1fc4f0c9bfa7be97f705034
Publikováno v:
Materials Today: Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bdc11896fb9fc75bcdb20cc37ead8e1
https://doi.org/10.1016/j.matpr.2023.03.463
https://doi.org/10.1016/j.matpr.2023.03.463
Publikováno v:
Silicon. 14:10217-10224
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::361465106afeb656c71d8fc9f11f9362
https://doi.org/10.1007/s12633-022-01727-2
https://doi.org/10.1007/s12633-022-01727-2
Publikováno v:
Silicon. 14:9361-9366
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed44b8b34d61810da5536b11867f340f
https://doi.org/10.1007/s12633-021-01624-0
https://doi.org/10.1007/s12633-021-01624-0
Publikováno v:
Materials Today: Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99d448bb072fca9029f691b7f9eecb99
https://doi.org/10.1016/j.matpr.2023.03.371
https://doi.org/10.1016/j.matpr.2023.03.371
Autor:
Vaibhav Purwar
Publikováno v:
2022 IEEE International Conference on Current Development in Engineering and Technology (CCET).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac58336227098d2946a340005837807a
https://doi.org/10.1109/ccet56606.2022.10080377
https://doi.org/10.1109/ccet56606.2022.10080377
Publikováno v:
Silicon. 14:5495-5502
This article presents the analytical modeling of the subthreshold drain current of junctionless channel-modulated double-material double-gate ( $$ JL $$ - $$ CM $$ - $$ DMDG $$ ) MOSFET. The first time under the full depletion mode, the center channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95b6d127986c507b27843cac693846fe
https://doi.org/10.1007/s12633-021-01327-6
https://doi.org/10.1007/s12633-021-01327-6
Publikováno v:
Silicon. 14:2679-2686
Silicon-based Nanotube Junction-less Double-Gate-All-Around (NJL-DGAA) MOSFETs has become a promising solution to high-speed ULSI chip design. However, the change in surrounding temperature affects its performances, such as hot carrier injection (HCI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::878229040e453111302b119614882a11
https://doi.org/10.1007/s12633-021-01069-5
https://doi.org/10.1007/s12633-021-01069-5
Publikováno v:
Silicon. 13:2071-2075
In the present paper, the dielectric pocket (DP) technology has been employed in the Gate-All-Around (GAA) MOSFETs to improve the scalability and performance of the device. The upgraded immunity towards short-channel effects (SCEs) and elevation in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67a2b6965bb8a00db1d65335ec39f037
https://doi.org/10.1007/s12633-020-00610-2
https://doi.org/10.1007/s12633-020-00610-2
Dielectric Pocket Double-Gate-All-Around (DP-DGAA) MOSFETs are one of the preferred choices for ULSI applications because of significantly low off-current, reduced power dissipation, and high immunity to short channel effect. However, DP-DGAA MOSFETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86ff00fe4ee4d8f8cab154b1b3129e5c
https://doi.org/10.21203/rs.3.rs-816886/v1
https://doi.org/10.21203/rs.3.rs-816886/v1
