Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Vahlman, H."'
Autor:
Maischner, F., Maus, S., Greulich, J., Lohmüller, S., Lohmüller, E., Saint-Cast, P., Ourinson, D., Vahlman, H., Hergert, K., Riepe, S., Glunz, S., Rein, S.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::4ac10e3401840a3192c5132ef28652fd
https://publica.fraunhofer.de/handle/publica/270553
https://publica.fraunhofer.de/handle/publica/270553
37th European Photovoltaic Solar Energy Conference and Exhibition; 409-413
High-intensity illumination treatments are a versatile method to reduce the performance loss of solar cells due to LeTID since they can be applied at any point of time be
High-intensity illumination treatments are a versatile method to reduce the performance loss of solar cells due to LeTID since they can be applied at any point of time be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f818ce77b9d7c1ea8392c10713e0316
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 19, p1-11, 11p, 1 Chart, 10 Graphs
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 19, p1-10, 10p, 2 Diagrams, 1 Graph
Akademický článek
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35th European Photovoltaic Solar Energy Conference and Exhibition; 254-261
High-efficiency solar cells have a high internal capacitance that tends to distort I-V measurements during short voltage sweep times compatible with flash testing. Recent
High-efficiency solar cells have a high internal capacitance that tends to distort I-V measurements during short voltage sweep times compatible with flash testing. Recent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b03c74d46cfa62ea057a2e294bde0ba6
Copper contamination causes minority carrier lifetime degradation in p-type silicon bulk under illumination, leading to considerable efficiency losses in affected solar cells. Although the existence of this phenomenon has been known for almost two de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::dacc1d1d9fc9eca2d895a59c94d00a7e
https://publica.fraunhofer.de/handle/publica/249142
https://publica.fraunhofer.de/handle/publica/249142
The presence of copper impurities is known to deteriorate the bulk minority carrier lifetime of silicon. In p-type silicon, the degradation occurs only under carrier injection (e.g., illumination), but the reason for this phenomenon called copper-rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::1a73a9d03b1530cf062a8e8a24ef1001
https://publica.fraunhofer.de/handle/publica/249143
https://publica.fraunhofer.de/handle/publica/249143
Akademický článek
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