Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Vahideh Khademhosseini"'
Publikováno v:
Molecules, Vol 27, Iss 1, p 301 (2022)
The single electron transistor (SET) is a nanoscale switching device with a simple equivalent circuit. It can work very fast as it is based on the tunneling of single electrons. Its nanostructure contains a quantum dot island whose material impacts o
Externí odkaz:
https://doaj.org/article/c1e07c6fe9814dbabac9aea07440f514
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:8007-8013
Single electron transistor (SET) is a fast device with promising features in nanotechnology. Its operation speed depends on the island material, so a carbon based material such as graphene nanoribbon (GNR) can be a suitable candidate for using in SET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d4ca46687630d3e129c19206073c18b
https://doi.org/10.1007/s10854-019-01121-6
https://doi.org/10.1007/s10854-019-01121-6
Publikováno v:
Proceedings of the National Academy of Sciences, India Section A: Physical Sciences. 90:475-479
White graphene as a two-dimensional material has honeycomb lattice which is comprised of boron and nitrogen atoms. Its mechanical properties are similar to graphene, but its electrical properties are different because it has a large bandgap about 5.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a146069a2f43d22a185d218f1a9f4f
https://doi.org/10.1007/s40010-018-0576-5
https://doi.org/10.1007/s40010-018-0576-5
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:M26-M29
The single electron transistor (SET) is a promising nanoscale device that can be utilized to increase the speed of data processing in electronic chips. It operates by transfer of few and even one electron to the island. The island material is a facto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3e8377cd3b255fd03ddf45becfb202d
https://doi.org/10.1149/2.0041903jss
https://doi.org/10.1149/2.0041903jss
Publikováno v:
Journal of Computational Electronics. 18:428-435
The single-electron transistor (SET) principle of operation is based on the Coulomb blockade (CB) phenomenon. The island material and associated defects have a direct impact on the range of the CB effect and the operating speed of the SET. In this re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df24946f95720c1efd0abec5e9359352
https://doi.org/10.1007/s10825-018-01290-3
https://doi.org/10.1007/s10825-018-01290-3
Publikováno v:
AEU - International Journal of Electronics and Communications. 90:97-102
The single electron transistor (SET) as a nanoscale transistor operates according to the electron tunneling via two tunnel junctions. Since selecting a suitable island material plays a key role in electron transfer through the tunnel junctions, in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef413a40d75c2e2d8ca6565ca7f7b62e
https://doi.org/10.1016/j.aeue.2018.04.015
https://doi.org/10.1016/j.aeue.2018.04.015
Publikováno v:
Brazilian Journal of Physics. 48:406-410
Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22edb9531646ce22ff3dd5815079a70b
https://doi.org/10.1007/s13538-018-0574-8
https://doi.org/10.1007/s13538-018-0574-8
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:M145-M152
Single electron transistor (SET) is a nano dimension device that is offered by technology to solve the problem of aggressive scaling in traditional transistors. Its operation speed depends on carrier mobility of its quantum dot. In this research, ful
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f25fea5764642d9eeb487620ddef077a
https://doi.org/10.1149/2.0081810jss
https://doi.org/10.1149/2.0081810jss
Publikováno v:
Solid State Communications. 327:114234
The single electron transistor (SET) is nanoscale device which operates fast based on tunneling of single electrons in potential barriers. It has low energy consumption, small size and simplified equivalent circuit. This transistor contains source, g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49015096e2eaf500bbab83a3479e25a7
https://doi.org/10.1016/j.ssc.2021.114234
https://doi.org/10.1016/j.ssc.2021.114234
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:071001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b70c67a758b2bdb5979c237077347b80
https://doi.org/10.1149/2162-8777/abae15
https://doi.org/10.1149/2162-8777/abae15