Zobrazeno 1 - 1
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pro vyhledávání: '"Vahagn Martirosyan"'
Publikováno v:
Journal of Vacuum Science & Technology A. 36:041301
To achieve the etching of silicon nitride spacers with a perfect anisotropy and an almost infinite selectivity, an alternative method consisting of two sequential steps—surface modification in hydrogen or helium plasma followed by the selective rem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86f5f838899d2b1b5e0e100f14f0752a
https://doi.org/10.1116/1.5025152
https://doi.org/10.1116/1.5025152
