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pro vyhledávání: '"Vadimir Radulović"'
Autor:
Vadimir Radulović, José Coutinho, Ivana Capan, Takeshi Ohshima, Luka Snoj, Takahiro Makino, Tomislav Brodar, Željko Pastuović, Kamel Demmouche, Rainer Siegele, Vitor J.B. Torres, Shin-ichiro Sato
Publikováno v:
Materials Science Forum
We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layers following irradiation with fast neutrons, as well as 600 keV H+and 2 MeV He++ion implantations. We also look at electron emission energies and mecha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd49393b14b813c6fb42c4e19b1312a4
https://doi.org/10.4028/www.scientific.net/msf.924.225
https://doi.org/10.4028/www.scientific.net/msf.924.225
