Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Vadim Timoshkov"'
Autor:
Jinsun Kim, Seung Yoon Lee, Peter Nikolsky, Wim Tjibbo Tel, Jin-Ho Lee, Koen Thuijs, Hyun-Woo Yu, Yuxiang Yin, Sunyoung Yea, Kim Sang-Uk, Denis Ovchinnikov, Harm Dillen, Jeongjin Lee, Young-Hoon Song, Jae-Seung Jeong, Yun-A Sung, Kaustubh Padhye, James Lee, Antonio Corradi, Joon-Soo Park, Isabel de la Fuente Valentin, Miao Wang, Marc Kea, Daan Slotboom, Vadim Timoshkov, Daniel Park, Jin-Woo Lee, Rhys Su, Chan Hwang, Sun Wook Jung, Oh-Sung Kwon
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
In leading edge patterning processes, overlay is now entangled with CD including OPC residuals and stochastics. This combined effect is a serious challenge for continued shrink and can be characterized with an Edge Placement Error (EPE) budget contai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdbd77fee19202d45a735455ed8ea97a
https://doi.org/10.1117/12.2551997
https://doi.org/10.1117/12.2551997
Autor:
Kaushik A. Kumar, Carlos Fonseca, Ton Kiers, Florin Cerbu, Christophe Beral, Guillaume Schelcher, Liesbeth Reijnen, Marc Demand, Mark John Maslow, Tae Kwon Jee, Vadim Timoshkov
Publikováno v:
Optical Microlithography XXXI.
Spacer-assisted pitch multiplication is a patterning technique that is used on many different critical layers for memory and logic devices. Pitch walk can occur when the spacer process, a combination of lithography, deposition and etch processes, pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11190a340b0d6cb7f58d822d99c4ccc6
https://doi.org/10.1117/12.2297345
https://doi.org/10.1117/12.2297345
Autor:
Stijn Schoofs, Mu Feng, Kyohei Koike, Kumar Kaushik, Hidetami Yaegashi, Fumiko Yamashita, Vadim Timoshkov, Shota Yoshimura, Mark John Maslow, Liesbeth Reijnen, Shinya Morikita, Chris Spence, Kiyohito Ito, Carlos Fonseca, Peter Choi, Tae Kwon Jee
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
Extreme UV(EUV) technology must be potential solution for sustainable scaling, and its adoption in high volume manufacturing(HVM) is getting realistic more and more. This technology has a wide capability to mitigate various technical problem in Multi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34bba6132b6143c005f833cbf4f27006
https://doi.org/10.1117/12.2297661
https://doi.org/10.1117/12.2297661
Autor:
Kyohei Koike, Peter Choi, Stijn Schoofs, Tae Kwon Jee, Carlos Fonseca, David Rio, Hidetami Yaegashi, Yu-Cheng Tsai, Vadim Timoshkov
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2017.
Both local variability and optical proximity correction (OPC) errors are big contributors to the edge placement error (EPE) budget which is closely related to the device yield. The post-litho contact hole healing will be demonstrated to meet after-et
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab0f2479160f2ca9c626ddf8789dcacf
https://doi.org/10.1117/12.2281627
https://doi.org/10.1117/12.2281627
Autor:
Mark John Maslow, Michael Kubis, Chris Spence, Jan Mulkens, Michael Hanna, Bram Slachter, Vadim Timoshkov, Wim Tjibbo Tel
Publikováno v:
SPIE Proceedings.
In this paper we discuss the edge placement error (EPE) for multi-patterning semiconductor manufacturing. In a multi-patterning scheme the creation of the final pattern is the result of a sequence of lithography and etching steps, and consequently th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c91611601e331d1d52963069bde6e2b
https://doi.org/10.1117/12.2260155
https://doi.org/10.1117/12.2260155
Autor:
Kenichi Oyama, Mark John Maslow, Masatoshi Yamato, Paolo Di Lorenzo, Carlos Fonseca, Kyohei Koike, Shohei Yamauchi, Hidetami Yaegashi, Vadim Timoshkov, Arisa Hara, Sakurako Natori, Ton Kiers
Publikováno v:
SPIE Proceedings.
Multi-patterning has been adopted widely in high volume manufacturing as 193 immersion extension, and it becomes realistic solution of nano-order scaling. In fact, it must be key technology on single directional (1D) layout design [1] for logic devis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcb6e26be128351d633f0be5dfada951
https://doi.org/10.1117/12.2258210
https://doi.org/10.1117/12.2258210
Autor:
Joost Bekaert, Vadim Timoshkov, Friso Wittebrood, Ming Mao, Stefan Decoster, Philippe Leray, Bogumila Kutrzeba Kotowska, Paul Colsters, Mark John Maslow, Greg McIntyre, Joern-Holger Franke, Emily Gallagher, Frederic Lazzarino, Ton Kiers, Stephane Lariviere, Paolo Di Lorenzo, Victor M. Blanco Carballo, Eric Hendrickx, Joep van Dijk, R. Ryoung-han Kim
Publikováno v:
SPIE Proceedings.
The imec N7 (iN7) platform has been developed to evaluate EUV patterning of advanced logic BEOL layers. Its design is based on a 42 nm first-level metal (M1) pitch, and a 32 nm pitch for the subsequent M2 layer. With these pitches, the iN7 node is an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bf8c19cbc1b652c29e7864d5b0690a8
https://doi.org/10.1117/12.2258004
https://doi.org/10.1117/12.2258004
Autor:
Christophe Beral, Hidetami Yaegashi, Mark John Maslow, Tae Kwon Jee, Ming Mao, Stephane Lariviere, Serge Biesemans, Kaushik A. Kumar, Paolo Di Lorenzo, Joost Bekaert, Peter de Loijer, Andrew Metz, Vadim Timoshkov, Soichiro Okada, Shinya Morikita, Marc Demand, Ton Kiers
Publikováno v:
SPIE Proceedings.
Complimentary lithography is already being used for advanced logic patterns. The tight pitches for 1D Metal layers are expected to be created using spacer based multiple patterning ArF-i exposures and the more complex cut/block patterns are made usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439e6d9a30273e930ca0674175b98457
https://doi.org/10.1117/12.2257979
https://doi.org/10.1117/12.2257979
Publikováno v:
SPIE Proceedings.
Patterning solutions based on ArF immersion lithography are the fundamental enablers of device scaling. In order to meet the challenges of industry technology roadmaps, tool makers in the DUV lithography area are continuously investigating all of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853a0b184eaf02b63f5b19747a956ffb
https://doi.org/10.1117/12.2219945
https://doi.org/10.1117/12.2219945
Autor:
Vadim Timoshkov, Xinjian Zhou, Marinus Jochemsen, Christopher J. Jones, Roy Anunciado, Stefan Hunsche, Neal Callan
Publikováno v:
SPIE Proceedings.
As process window margins for cutting edge DUV lithography continue to shrink, the impact of systematic patterning defects on final yield increases. Finding process window limiting hot spot patterns and monitoring them in high volume manufacturing (H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61078a4d3b6c7a454459e3e72fa53d68
https://doi.org/10.1117/12.2219906
https://doi.org/10.1117/12.2219906