Zobrazeno 1 - 10
of 322
pro vyhledávání: '"Vad, K."'
Autor:
Walcz, E., Zoletnik, S., Mészáros, S., Vad, K., Hakl, J., Gárdonyi, G., Jachmich, S., Kruezi, U., Lehnen, M.
Publikováno v:
In Fusion Engineering and Design June 2023 191
Autor:
Zoletnik, S., Walcz, E., Jachmich, S., Kruezi, U., Lehnen, M., Anda, G., Szabolics, T., Szepesi, T., Bartók, G., Cseh, G., Boros, Z., Dunai, D., Gárdonyi, G., Hakl, J., Hegedűs, S., Katona, I., Kovacs, A., Kocsis, G., Lengyel, M., Mészáros, S., Nagy, D., Oravecz, D., Poszovecz, L., Réfy, D., Vad, K., Vécsei, M.
Publikováno v:
In Fusion Engineering and Design May 2023 190
Autor:
Drozdov, M. N., Drozdov, Y. N., Csik, A., Novikov, A. V., Vad, K., Yunin, P. A., Yurasov, D. V., Belykh, S. F., Gololobov, G. P., Suvorov, D. V., Tolstogouzov, A.
Quantification of Ge in Si1-xGex structures (0.0920.9997) of intensity ratios
Externí odkaz:
http://arxiv.org/abs/1701.01612
Autor:
Török, T. I., Csik, A., Hakl, J., Vad, K., Kövér, L., Tóth, J., Mészáros, S., Kun, É., Sós, D.
Microelectronic-grade copper foils were immersion silver plated in a home-made non-cyanide alkaline silver nitrate - thiosulfate solution and in two commercially available industrial baths via contact reductive precipitation. The concentration depth
Externí odkaz:
http://arxiv.org/abs/1502.01579
Publikováno v:
Vacuum 82(2) (2008) 257-260
Amorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and diffusion process
Externí odkaz:
http://arxiv.org/abs/0902.2042
The overall quality of multilayer thin films prepared by electrodeposition is strongly influenced by the surface and interface roughness which increases with the layer number. For that very reason the reliable analysis of the first few layers can be
Externí odkaz:
http://arxiv.org/abs/0902.1672
Autor:
Vad, K., Hakl, J., Csik, A., Meszaros, S., Kis-Varga, M., Langer, G. A., Pallinger, A., Bodog, M.
Electromagnetic properties of doped perovskites depend sensitively on the doping level. Both the superconducting transition temperature of Bi2Sr2Ca(Pr)Cu2O8+d compounds and the magnetic and electronic transport properties of La(Sr)Co(Fe)O3 perovskite
Externí odkaz:
http://arxiv.org/abs/0902.1649
Autor:
Aksenov, V. L., Zhernenkov, K. N., Khaidukov, Yu. N., Nikitenko, Yu. V., Bottyan, L., Tancziko, F., Merkel, D., Nagy, B., Deak, L., Nagy, D. L., Szilagyi, E., Horvath, Zs. E., Kiss, L., Csik, A., Vad, K., Langer, G., Ruhm, A.
This work is devoted to experimental study of influence of superconductivity (S) on ferromagnetism (FM) (inverse proximity effects) with the help of Polarized Neutron Reflectivity. Combining meausurements of specular and diffuse intensities it is pos
Externí odkaz:
http://arxiv.org/abs/0901.2550
Publikováno v:
J.Phys.:Condens.Matter 21 (2009) 124202
The mechanism of magnetization reversal in single-domain ferromagnetic particles is of interest in many applications, in most of which losses must be minimized. In cancer therapy by hyperthermia the opposite requirement prevails: the specific loss po
Externí odkaz:
http://arxiv.org/abs/0810.1455
Pulsed high current experiments in single crystals of the high-$T_{c}$ superconductor Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+\delta}$ in c-axis directed magnetic field $H$ reveal that the $ab$-face resistance in the free flux flow regime is a solely logarit
Externí odkaz:
http://arxiv.org/abs/0803.1804