Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Vaclav, Holý"'
Autor:
Stefano Cecchi, Jamo Momand, Daniele Dragoni, Omar Abou El Kheir, Federico Fagiani, Dominik Kriegner, Christian Rinaldi, Fabrizio Arciprete, Vaclav Holý, Bart J. Kooi, Marco Bernasconi, Raffaella Calarco
Publikováno v:
Advanced Science, Vol 11, Iss 1, Pp n/a-n/a (2024)
Abstract The possibility to engineer (GeTe)m(Sb2Te3)n phase‐change materials to co‐host ferroelectricity is extremely attractive. The combination of these functionalities holds great technological impact, potentially enabling the design of novel
Externí odkaz:
https://doaj.org/article/6c238b86e2b44ab485a514f22d7305c6
Autor:
Tanja, Etzelstorfer, Mohammad Reza, Ahmadpor Monazam, Stefano, Cecchi, Dominik, Kriegner, Daniel, Chrastina, Eleonora, Gatti, Emanuele, Grilli, Nils, Rosemann, Sangam, Chatterjee, Vaclav, Holý, Fabio, Pezzoli, Giovanni, Isella, Julian, Stangl
Publikováno v:
Journal of Applied Crystallography
X-ray diffraction-based structural analysis results of possible direct bandgap Si/Ge superlattices composed of monolayer thin deposits are presented, together with theoretical predictions and first optical measurements.
This article1 reports the
This article1 reports the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::509fc59ecfabc5f4ebd251d159b97a8c
https://pubmed.ncbi.nlm.nih.gov/26089750
https://pubmed.ncbi.nlm.nih.gov/26089750
During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, an
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