Výsledky vyhledávání - "VRIJMOETH, J"

Akademický článek

Single crystallites in `planar polycrystalline' oligothiophene films: Determination...

Autor: Vrijmoeth, J., Stok, R. W., Veldman, R., Schoonveld, W.A., Klapwijk, T.M.

Publikováno v: Journal of Applied Physics; 4/1/1998, Vol. 83 Issue 7, p3816, 8p, 12 Color Photographs, 2 Black and White Photographs, 5 Diagrams, 8 Graphs

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IMPORTANCE OF THE ADDITIONAL STEP-EDGE BARRIER IN DETERMINING FILM MORPHOLOGY DURING EPITAXIAL-GROWTH

Autor: MEYER, JA, VRIJMOETH, J, VANDERVEGT, HA, VLIEG, E, BEHM, RJ

Publikováno v: Physical Review. B: Condensed Matter and Materials Physics, 51(20), 14790-14793. AMER PHYSICAL SOC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::83b713eea0b31b598df02c3b0e3f23a5
https://research.rug.nl/en/publications/86d35c33-7c34-4041-bd9c-8c75aa0ad358

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Effect of the top electrode workfunction on the rectification ratio of Light Emitting Diodes (LEDs) based on poly(3-octylthiophene)

Autor: GARTEN, F, VRIJMOETH, J, SCHLATMANN, AR, GILL, RE, KLAPWIJK, TM, HASZIIOANNOU, G, Yang, SC, Chandrasekhar, P

Publikováno v: OPTICAL AND PHOTONIC APPLICATIONS OF ELECTROACTIVE AND CONDUCTING POLYMERS, 81-88
STARTPAGE=81;ENDPAGE=88;TITLE=OPTICAL AND PHOTONIC APPLICATIONS OF ELECTROACTIVE AND CONDUCTING POLYMERS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::f06956b65e4251d51d458c5bf527c3eb
https://research.rug.nl/en/publications/1ad6b405-0b26-4e06-8e0d-a80fb416bae3

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CoSi_2/Si(111) interface: Determination of the interfacial metal coordination number

Autor: Vrijmoeth, J., Zaima, S., Vlieg, E., Frenken, J.W.M.

Publikováno v: Physical Review B, 45(12), 6700-6708. AMER PHYSICAL SOC
Physical Review B, 45(12), 6700-6708

The morphology and the surface and interface structure of flat CoSi2 films (thickness 2 Si-Co-Si triple layers) epitaxially grown on Si(111) have been investigated using medium-energy ion scattering with ultrahigh energy resolution. The data show tha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f3cee1422d47852d9aeba03653883eac
https://hdl.handle.net/1887/62732

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Monolayer resolution in medium-energy ion-scattering experiments on the NiSi2(111) surface

Autor: Vrijmoeth, J., Zagwijn, P.M., Frenken, J.W.M., Veen, J.F. van der

Publikováno v: Physical Review Letters, 67(9), 1134-1137. AMER PHYSICAL SOC
Physical Review Letters, 67(9), 1134-1137

The surface structure of the epitaxial NiSi2/Si(111) system has been determined applying a new ion-scattering method. Detecting backscattered ions with ultrahigh energy resolution we resolve the signals from successive atomic layers. From both their

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d75c89514f1feec6c8e0cad2cd0f7842
https://hdl.handle.net/1887/62919

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