Výsledky vyhledávání - "V.Yu. Aristov"

Comment on 'Adsorption of hydrogen and hydrocarbon molecules on SiC(001)' by Pollmann et al. (Surf. Sci. Rep. 69 (2014) 55–104)

Autor: Mario Rocca, Antonio Tejeda, Erich Wimmer, Fausto Sirotti, Patrick Soukiassian, Ludovic Douillard, Giulia Galli, V.Yu. Aristov, Alessandra Catellani, Fabrice Semond, Letizia Savio, Edvige Celasco, Luca Vattuone, M. D'angelo, Mathieu G. Silly

Publikováno v: Surface science 644 (2016): L170–L171. doi:10.1016/j.susc.2015.08.025
info:cnr-pdr/source/autori:E. Wimmer, E. Celasco, L. Vattuone, L. Savio, A. Tejeda, M. Silly, M. D'angelo, F. Sirotti, M. Rocca, A. Catellani, G. Galli, L. Douillard, F. Semond, V. Y. Aristov, and P. Soukiassian/titolo:Comment on "adsorption of hydrogen and hydrocarbon molecules on SiC(001)" by Pollmann et al. (Surf. Sci. Rep. 69 (2014) 55-104)/doi:10.1016%2Fj.susc.2015.08.025/rivista:Surface science/anno:2016/pagina_da:L170/pagina_a:L171/intervallo_pagine:L170–L171/volume:644
ResearcherID
Surface Science
Surface Science, Elsevier, 2016, 644, pp.L170-L171. ⟨10.1016/j.susc.2015.08.025⟩
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2016, 644, pp.L170-L171. ⟨10.1016/j.susc.2015.08.025⟩

International audience; This comment clarifies two issues related to the (001) surface reconstructions of cubic SiC, namely: (i) The failure of the bridge-bond model for H atoms interacting with the 3C-SiC(001) 3 × 2 reconstruction to explain all th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f639c0a41df796fe87e334ec4c10bc0
https://doi.org/10.1016/j.susc.2015.08.025

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Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface

Autor: Patrick Soukiassian, A. Taleb-Ibrahimi, G. Indlekofer, V.Yu. Aristov, C. Grupp, V. M. Zhilin, G. Le Lay

Publikováno v: Physical Review B. 60:7752-7755

We use high-resolution photoemission spectroscopy to measure the dispersions of quantized energy levels located in an accumulation two-dimensional electron channel created in the subsurface region of a semiconductor. The experiments are performed for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c438a79e06bf86882af1ef3affd73ae3
https://doi.org/10.1103/physrevb.60.7752

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Two-dimensional electron gas at InAs(100)1×2/1×4 Pb

Autor: V.Yu. Aristov, H. J. Kim, Robert L. Johnson, G. Le Lay, R. Belkhou, Marcel Carrere, V. M. Zhilin, Jean-Marc Layet

Publikováno v: Surface Science. :724-728

Upon deposition of one lead monolayer on the clean, In-terminated InAs(100)4×2/c(8×2) surface, we have obtained a new 1×2/1×4 superstructure and have studied its electronic properties by synchrotron radiation photoelectron spectroscopy (valence b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89c0b8556841578b994edb7b6de38df5
https://doi.org/10.1016/s0039-6028(97)00996-5

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Surface electronic structure of InAs(100)1x2/1x4-Pb

Autor: M. Carre`re, G. Le Lay, H.J. Kim, Jean-Marc Layet, R. Belkhou, V.Yu. Aristov, Robert L. Johnson

Publikováno v: Journal of Electron Spectroscopy and Related Phenomena. :613-617

Upon deposition and annealing of one Pb monolayer on the clean, In-terminatedInAs(100)-4 x 2/c(8 x 2) surface we have obtained a sharp1 x 2/1 x 4 superstructure. We have investigated its electronic structure by angle-resolved photoemission using sync

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fc553b22cc9f274b89d2f72e4d1b3895
https://doi.org/10.1016/s0368-2048(97)00175-8

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Photoemission Investigation of the 2D Electron Gas Created At the InAs(110) Surface

Autor: V.Yu. Aristov, G. M. Grehk, Robert L. Johnson, H. J. Kim, V. M. Zhilin, C. Giammichele, G. Le Lay, Patrick Soukiassian

Publikováno v: Surface Review and Letters. :235-240

On InAs(110) surfaces a downward band bending (BB) was produced either by cleavage defects or by adsorption of very small amounts of Cs atoms. As a consequence the Fermi level was moved high into the conduction band, resulting in the formation of a t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2675ded27a7680d0697037e5af96c4ad
https://doi.org/10.1142/s0218625x98000438

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Adsorption of C60 on Si(111)√3 × √3R(30°)-Ag

Autor: A. Cricenti, G. Le Lay, M. C. Hakansson, Mats Göthelid, M. C. Asensio, C. Giammichele, P. Perfetti, José Avila, V.Yu. Aristov

Publikováno v: Surface Science. :1061-1065

With the aim of using fullerene thin films as potential encapsulating material in surface reconstructions, we have studied the monolayer room temperature adsorption of C 60 on Si(111)∈3 × √3 R(30°)-Ag surfaces using Auger electron spectroscopy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::402406d53d17fd6f923c7d11c6c4c097
https://doi.org/10.1016/s0039-6028(96)81564-0

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Sb or Cs covered InAs(110) surfaces: moving EF into conduction band and quantized 2D electron channel

Autor: G. Le Lay, Patrick Soukiassian, Amina Taleb-Ibrahimi, V. M. Zhilin, V.Yu. Aristov, G. Indlekofer, Z. Hurych, M. Grehk

Publikováno v: Applied Surface Science. :73-78

With the study of the formation of Sb InAs interface by synchrotron radiation photoemission, we add a new piece of evidence that a two-dimensional free electron gas can be created at room temperature, on the (110) cleaved surface of InAs upon adsorpt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3224aa135b33d68730a90a37b8011bb4
https://doi.org/10.1016/s0169-4332(96)00123-7

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High resolution syncrotron radiation Si 2p core-level spectroscopy of Si(110)16x2

Autor: G. Le Lay, J.P. Lacharme, V.Yu. Aristov, N. Safta, G. Indlekofer, B. Nesterenko, C.A. Sébenne, Amina Taleb-Ibrahimi, A. Cricenti

Publikováno v: Journal of Electron Spectroscopy and Related Phenomena. 76:613-617

The clean Si(110)16x2 surface has been studied by high resolution synchrotron radiation core-level spectroscopy. A comparative detailed study of the Si 2p line with an experimental resolution better than 80 meV has been performed. The Si 2p spectra d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7180301ea7bc0a60bc941c547d9f6a41
https://doi.org/10.1016/0368-2048(95)02505-7

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Morphology and Electronic Properties of Hybrid Organic-Inorganic System: Ag Nanoparticles Embedded into CuPc Matrix

Autor: O.Yu. Vilkov, O. V. Molodtsova, I. M. Aristova, Maxim Tchaplyguine, V.Yu. Aristov, A. Pietzsch

Publikováno v: Advances in Materials Physics and Chemistry 02(04), 60-62 (2012). doi:10.4236/ampc.2012.24B017

Materials with a high on-off resistance ratio could become the basis for resistive random-access memory (RRAM). It is assumed that one of RRAM types can be based on hybrid organic-inorganic systems, while particular attention is focused on hybrid sys

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https://bib-pubdb1.desy.de/record/207300

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Nearly complete tuning of the Fermi level position at a prototypical metal-silicon interface: Lead on unpinned Si(111)1×1-H

Autor: J. Osvald, V.Yu. Aristov, G. Le Lay, R. Gunther, Amina Taleb-Ibrahimi, G. Indlekofer, Ph. Dumas, K. Hricovini

Publikováno v: Journal of Electron Spectroscopy and Related Phenomena. 68:419-426

Upon studying with very high resolution synchrotron radiation photoemission spectroscopy the ideally H-terminated Si(111)1×1 surfaces prepared by wet chemical procedure we prove for the first time that both n-type and p-type surfaces do not posses a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2813afef1418f0f05a30f04f6004aba7
https://doi.org/10.1016/0368-2048(94)02142-2

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