Zobrazeno 1 - 10
of 78
pro vyhledávání: '"V.Ya. Bratus'"'
Autor:
B.D. Shanina,, V.Ya. Bratus’
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 3, Pp 225-230 (2018)
This work presents theoretical studying the neutral divacancy, i.e., the Ky5 center that is one of the dominant defects in 3C-SiC bulk crystals subjected to relatively high dose of neutron irradiation. Being the paramagnetic center, the extended defe
Externí odkaz:
https://doaj.org/article/a6db6bc44b5040af8f315af30d38dc04
Autor:
S.V. Lemishko, I.P. Vorona, V.O. Yukhymchuk, V.Ya. Bratus', S.M. Okulov, V.V. Nosenko, S.O. Solopan, A.G. Belous
The improved compared to a rectangular TE(102 )cavity geometry of a dielectric resonator (DR) suitable for studying thin films and coatings has been calculated and experimentally verified. It is shown that electron paramagnetic resonance (EPR) signal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d727731aecae0ed4e30d62facff5811
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-192347
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-192347
Autor:
Bingbing Liu, Volodymyr P. Temchenko, V.B. Lozinskii, V.Ya. Bratus, V.O. Yukhymchuk, Nickolai I. Klyui, Wei Han
Publikováno v:
Materials Science in Semiconductor Processing. 71:232-239
We demonstrate availability of gas detonation deposition spraying (GDS) to obtain silicon layers that can be used for production of solar cells. Silicon powder remaining as secondary raw material of silicon and/or silicon production is used during GD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a994d27086d3444ccf9a6b0f3a89363b
https://doi.org/10.1016/j.mssp.2017.08.006
https://doi.org/10.1016/j.mssp.2017.08.006
Publikováno v:
Semiconductors. 38:598-602
Nanocrystalline silicon films formed using laser ablation of silicon targets were studied using electron spin resonance. The measurements were performed in the X band with modulation of the magnetic field at a frequency of ∼100 kHz at temperatures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eab9a00747d3791b3bc09c280c1fd27e
https://doi.org/10.1134/1.1755899
https://doi.org/10.1134/1.1755899
Publikováno v:
Journal of Physics: Condensed Matter. 14:12433-12440
A cluster calculation of hyperfine coupling constants based on density functional theory (DFT) has been performed for the carbon � 100� split interstitial (VC +2 C) in various charge and spin states in cubic SiC along with the dihydrogen-containi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42dae2a2a20e9030a7832ea8a5b3ba58
https://doi.org/10.1088/0953-8984/14/47/316
https://doi.org/10.1088/0953-8984/14/47/316
Publikováno v:
Physics of the Solid State. 44:831-836
The equilibrium geometry and hyperfine interaction constants of the nearest and next-to-nearest neighbor atoms are calculated for a negatively charged silicon vacancy in the high-spin state in cubic SiC. The calculations are performed within the clus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2fe9c453f282e673ec3d41760ac9d29
https://doi.org/10.1134/1.1477480
https://doi.org/10.1134/1.1477480
Publikováno v:
Applied Surface Science. 184:229-236
A brief review is given on EPR study of irradiation-induced defects in SiC. The results of low-temperature study of Ky1 and Ky2 centers reveal for both of them the CS symmetry, spin S= 1 2 and close coincidence of the g-tensor components. For Ky2 def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65ad853615dd598cd61915b203d25e87
https://doi.org/10.1016/s0169-4332(01)00674-2
https://doi.org/10.1016/s0169-4332(01)00674-2
Publikováno v:
Applied Surface Science. 184:273-277
Cluster calculation of carbon and silicon vacancies in cubic SiC has been performed for the charge states of +1, 0 and −1 and possible spin states. The density functional theory has been used with the B3LYP exchange-correlation functional and Gauss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbd50caf8e0a83ae5ab43cd354b79799
https://doi.org/10.1016/s0169-4332(01)00677-8
https://doi.org/10.1016/s0169-4332(01)00677-8
Publikováno v:
Physica B: Condensed Matter. :621-624
The low-temperature X-band EPR study of Ky1 and Ky2 centers assigned to positively charged carbon vacancy (V + c ) in two quasicubic sites of 6H-SiC crystal is presented. The Cs symmetry, spin S = 1/2 and close coincidence of the g-tensor components
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd37e0af70847829d1c1830d385925fe
https://doi.org/10.1016/s0921-4526(01)00755-4
https://doi.org/10.1016/s0921-4526(01)00755-4
Publikováno v:
Physica B: Condensed Matter. :637-640
Theoretical simulation of hyperfine parameters for the nearest and next-nearest neighbor atoms of V C + in SiC has been performed for the cubic and hexagonal clusters. The gradient-corrected all-electron DFT calculations with Becke's three-parameter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd5d1b25dea89ddc8351482e26781f76
https://doi.org/10.1016/s0921-4526(01)00773-6
https://doi.org/10.1016/s0921-4526(01)00773-6