Zobrazeno 1 - 10
of 162
pro vyhledávání: '"V.V. Voronkov"'
Autor:
V.V. Voronkov
Publikováno v:
Вестник. Серия физическая, Vol 27, Iss 3, Pp 18-25 (2008)
Spectrum and damping decrements of Langmuir and ionsound waves in nonideal plasma are found. Potential considering quantum effects of diffraction is used. Local fields are considered through the theory of linear dielectric response and numerical solu
Externí odkaz:
https://doaj.org/article/336e967c1b634cacb022c6fe820c206b
Akademický článek
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Akademický článek
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Autor:
E.N. Voronkova, V.V. Voronkov
Publikováno v:
International Journal of Mathematics and Physics. 6:48-52
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::775d3c5d9c8a30345496df6e7d06536f
https://doi.org/10.26577/2218-7987-2015-6-1-48-52
https://doi.org/10.26577/2218-7987-2015-6-1-48-52
Autor:
V.V. Voronkov, Robert Falster
Publikováno v:
Materials Science in Semiconductor Processing. 15:697-702
Vacancies in silicon are known to be highly mobile both at high temperatures (just below the melting point) and at cryogenic temperatures. Contrary to this, however, vacancy diffusivity near 800 °C — as deduced from the radiation-enhanced self-dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11dcc036beb350604ee6829c18cfcc2b
https://doi.org/10.1016/j.mssp.2012.04.004
https://doi.org/10.1016/j.mssp.2012.04.004
Autor:
V.V. Voronkov, Robert J. Falster
Publikováno v:
Materials Science and Engineering: B. 134:227-232
Vacancies and self-interstitials in silicon are involved, in a straightforward way, in the formation of grown-in microdefects, diffusion of metals (Au, Zn), self-diffusion and installation of vacancy depth profiles in thin quenched wafers. The diffus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbb88a433d11973d4ccd71bd951fdbb1
https://doi.org/10.1016/j.mseb.2006.07.011
https://doi.org/10.1016/j.mseb.2006.07.011
Autor:
Robert J. Falster, V.V. Voronkov
Publikováno v:
Materials Science and Engineering: B. :130-134
Nitrogen doping of float-zoned (FZ) crystals is known to suppress vacancy aggregation into voids (contrary to Czochralski-grown crystals). The frozen-in vacancy–nitrogen defects have been reported to behave in a complicated way during subsequent an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d371e7039676377eee7223b7a38a8b2
https://doi.org/10.1016/j.mseb.2004.07.023
https://doi.org/10.1016/j.mseb.2004.07.023
Autor:
V.V. Voronkov, Robert Falster
Publikováno v:
Materials Science in Semiconductor Processing. 5:387-390
The use of installed, tailored vacancy concentration profiles (MDZ ® ) to control oxygen precipitation behavior in silicon wafers has become an important technology for the 300 mm era. This paper presents a new model of one of the central physical p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::478d35cb0219cd3abcf8840614c93db9
https://doi.org/10.1016/s1369-8001(02)00119-1
https://doi.org/10.1016/s1369-8001(02)00119-1
Autor:
V.V Voronkov, Robert J. Falster
Publikováno v:
Microelectronic Engineering. 56:165-168
The incorporation of either vacancies or self-interstitials into growing crystal is controlled by the V / G ratio ( V is the growth rate and G is the near-interface temperature gradient). The critical value of V / G for the change-over from interstit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ed9d50b713dab487d0f4ec49cad429d
https://doi.org/10.1016/s0167-9317(00)00521-9
https://doi.org/10.1016/s0167-9317(00)00521-9
Autor:
V.V. Voronkov
Publikováno v:
Materials Science and Engineering: B. 73:69-76
Agglomeration of vacancies in oxygen-rich silicon crystals starts with nucleation of oxide particles. Some particles are then transformed into voids by cavitation: a bubble is nucleated at a corner of an octahedral particle. Evolution of a bubbled pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2621b00ff1a313ed3ce1d2c3a11a7fa5
https://doi.org/10.1016/s0921-5107(99)00436-5
https://doi.org/10.1016/s0921-5107(99)00436-5