Zobrazeno 1 - 10
of 19
pro vyhledávání: '"V.V. Shynkarenko"'
Autor:
V.V. Shynkarenko
Publikováno v:
Innovate Pedagogy. 1:193-196
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62460104a68d6ee999e000661955c61a
https://doi.org/10.32782/2663-6085/2023/55.1.37
https://doi.org/10.32782/2663-6085/2023/55.1.37
Publikováno v:
Innovate Pedagogy. 2:98-101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc7a922f130284b38a5050f16033928c
https://doi.org/10.32843/2663-6085/2020/30-2.19
https://doi.org/10.32843/2663-6085/2020/30-2.19
Autor:
S.M. Red’ko, V.B. Neymash, R. A. Red’ko, G.V. Milenin, V. V. Shvalagin, O.S. Kondratenko, V.V. Shynkarenko, V.Y. Povarchuk
Publikováno v:
Materials Chemistry and Physics. 267:124669
The effect of electron irradiation on the evolution of photoluminescence and optical properties of Si-doped GaN was investigated. MOCVD grown GaN thin films were irradiated with 4 MeV electrons at different doses of 1·107, 2.5·107 and 1·108 rad. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbad0795c2fad817b27ab8158e595470
https://doi.org/10.1016/j.matchemphys.2021.124669
https://doi.org/10.1016/j.matchemphys.2021.124669
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 2, Pp 173-179 (2018)
The results of a complex study of C60/Si heterosystems are presented in this work: the crystal structure and composition of the films, internal mechanical stresses, electronic parameters of the film and the film-substrate interface, and the effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93344508bd1a73732c8618adf0546e7c
https://doi.org/10.15330/pcss.18.2.173-179
https://doi.org/10.15330/pcss.18.2.173-179
Autor:
V. S. Slipokurov, A. V. Zorenko, A. V. Sachenko, A. S. Slepova, A. V. Bobyl, V.V. Shynkarenko, V. P. Kladko, Alexander Belyaev, I.N. Arsentiev, R. V. Konakova, N. V. Safryuk, V. M. Kovtonyuk, Ya. Ya. Kudryk, N. S. Boltovets, A. I. Gudymenko
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 18:317-323
Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact resistan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5cd48bd5f5d353e1889174f1cf7a159
https://doi.org/10.15407/spqeo18.03.317
https://doi.org/10.15407/spqeo18.03.317
Autor:
V.V. Shynkarenko
Publikováno v:
2012 28th International Conference on Microelectronics Proceedings.
Thus, it is shown that short-term microwave irradiation leads to phase modification of the TiB 2 -TiC-C and TiB 2 -B 4 C-C composite materials. As a result, both their composition and microhardness distribution are changed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b75b8f0e6394d819d996c18f52fc32e7
https://doi.org/10.1109/miel.2012.6222812
https://doi.org/10.1109/miel.2012.6222812
Autor:
V. V. Milenin, V.V. Shynkarenko, Boltovets, V.M. Ivanov, V.M. Sheremet, Ya. Ya. Kudryk, Yu. N. Sveshnikov, R. V. Konakova, B.S. Yavich
We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with circular contact geometry. The T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2b492372dcb27d40a7afc809e43ced8
http://dspace.nbuv.gov.ua/handle/123456789/118559
http://dspace.nbuv.gov.ua/handle/123456789/118559
Autor:
V.F. Mitin, J. Koprinarova, L. A. Matveeva, V. V. Milenin, E. Yu. Kolyadina, N. S. Boltovets, R. V. Konakova, D.I. Voitsikhovskyi, Elena Atanassova, V.V. Shynkarenko
Publikováno v:
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).
We present the results of comprehensive investigations of the effects of ordering enhanced by magnetron microwave radiation (frequency of 2.45 GHz, irradiance of 1.5 W/cm/sup 2/, and processing duration of 10 s) in Ta/sub 2/O/sub 5/-p-Si heterosystem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9724e606e0b86d98015f3819f1a179e
https://doi.org/10.1109/miel.2002.1003313
https://doi.org/10.1109/miel.2002.1003313
Akademický článek
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Akademický článek
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