Zobrazeno 1 - 10 of 105 pro vyhledávání: '"V.V. Ratnikov"'
1
Nonradiative recombination dynamics in InGaN/GaN LED defect system
Autor: Anton E. Chernyakov, Eugene B. Yakimov, N. M. Shmidt, M.M. Sobolev, V.V. Ratnikov
Publikováno v: Superlattices and Microstructures. 45:301-307
Complex investigations, including measurements of C – V curves, studies of I – V curves in the 10 mV–5 V voltage and 10−14–1 A current ranges and QE(I) dependences, were carried out on the set of InGaN/GaN LEDs with different active region
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8b03734a7e1728d7af33f9ab187a49e
https://doi.org/10.1016/j.spmi.2008.10.045
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2
X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates
Autor: Rositza Yakimova, Mikael Syväjärvi, V.B. Shuman, V.V. Ratnikov, I.L. Shulpina, N.S. Savkina
Publikováno v: Materials Science Forum. :265-268
The methods of X-ray topography and diffractometry have been applied to characterize the structure of epilayers grown on porous layers. Two geometrical configurations of defects determined to be stacking faults (SF) were revealed: i) with the images
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6d980fe769fc88a222f90890419e50d2
https://doi.org/10.4028/www.scientific.net/msf.483-485.265
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3
Role of the defects under porous silicon carbide formation
Autor: V.B. Shuman, A.S. Tregubova, N.S. Savkina, G. N. Mosina, Jeremy Sloan, L.M. Sorokin, V.V. Ratnikov, John L. Hutchison
Publikováno v: Applied Surface Science. 184:252-256
The resent study is concerned with the structure of porous silicon carbide (PSC) layers fabricated on 6H–SiC substrates produced by CREE Research and differ from each other by the defects presented (Type I and Type II). For Type I samples, the curr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::720d9cb30b4c2e1fcd34d052b0cf240a
https://doi.org/10.1016/s0169-4332(01)00504-9
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4
TEM and HREM study of 3D silicon and platinum nanoscale assemblies in dielectric opal matrix
Autor: N. A. Feoktistov, Alexander B. Pevtsov, Jeremy Sloan, V.V. Ratnikov, Valery G. Golubev, D A Kurduykov, L. M. Sorokin, John L. Hutchison
Publikováno v: Semiconductor Science and Technology. 16:955-960
In this paper, regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. Silicon was introduced into opal pores by thermal CVD. The filling of the opal pores was varied by c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e240c4c610a7a30df92b7e5d82ecb0b9
https://doi.org/10.1088/0268-1242/16/12/301
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7
The effect of high-temperature epitaxial SiC layer growth on the structure of porous silicon carbide
Autor: V.V. Ratnikov, N.S. Savkina, V. B. Shuman
Publikováno v: Semiconductors. 35:153-157
Porous silicon carbide layers obtained by electrochemical etching of 6H-SiC at three anode current densities were investigated. X-ray double-and triple-crystal diffractometry and scanning electron microscopy were used to study the structure of porous
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e08c31dc8863cca26c2171cbfe972f37
https://doi.org/10.1134/1.1349922
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10
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