Zobrazeno 1 - 10
of 198
pro vyhledávání: '"V.V. Lysak"'
Autor:
I.V. Smirnov, A.V. Chornyi, V.V. Lysak, P.V. Kaplun, O.S. Drobot, M.M. Poberezhnyi, A.V. Rutkovskyi
Publikováno v:
Проблеми трибології, Vol 27, Iss 3/105, Pp 89-95 (2022)
The article is devoted to the analysis of wear resistance of diffusion coatings, which were applied by ionic nitriding on steel 40ХН2МА. There is a comparison of the technological efficiency of the results. The parameters of technological modes u
Externí odkaz:
https://doaj.org/article/e3a70c5554ee4029ad6253ef6933ab3d
Publikováno v:
The Paton Welding Journal. 2020:31-35
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96b3b7d632a8212be615cf3d2d858693
https://doi.org/10.37434/tpwj2020.09.05
https://doi.org/10.37434/tpwj2020.09.05
Akademický článek
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Publikováno v:
Superlattices and Microstructures. 46:603-610
Influence of the digital alloy nanostructuring of barriers in In0.49Ga0.51P/In0.49(Ga0.6Al0.4)0.51P single quantum well structure on its optical and transport properties has been theoretically investigated. Calculated band structure, low-temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a012bb009f2bb564c84c939582aac21d
https://doi.org/10.1016/j.spmi.2009.07.037
https://doi.org/10.1016/j.spmi.2009.07.037
Publikováno v:
Optical and Quantum Electronics. 40:1219-1225
In this work, the simulation of the 980 nm InGaAs intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers (ICOC VCSELs) with separated triplets of quantum wells (STQW) is presented. We analyze the thermal, electrical and optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e77c81d2c2d0aa63685f6f0fd4883e9d
https://doi.org/10.1007/s11082-009-9305-2
https://doi.org/10.1007/s11082-009-9305-2
Publikováno v:
Superlattices and Microstructures. 43:120-131
Knowledge of the energy band diagram is very important in semiconductor physics due to the fact that the band diagram influences almost all parts of the physics of a semiconductor device. In this paper we examine a piecewise-constant approximation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::339d0a61c5f1ae77618fd132fe8bbae7
https://doi.org/10.1016/j.spmi.2007.08.002
https://doi.org/10.1016/j.spmi.2007.08.002
Publikováno v:
IEEE Journal of Quantum Electronics. 41:797-807
A numerical model for the investigation of the ultrafast gain properties in asymmetrical multiple quantum-well semiconductor optical amplifiers has been developed considering propagation of ultrashort optical pulses with different wavelengths. The dy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea98059dd2063a8d4a1b33dbdd64c222
https://doi.org/10.1109/jqe.2005.846694
https://doi.org/10.1109/jqe.2005.846694
Publikováno v:
physica status solidi (a). 188:961-966
Results of investigation of the oxide-confined vertical-cavity laser (VCSEL) including non-uniformity of diffusion processes, dynamical effects, and transparent cavity modes are presented. The influence of the spatial hole burning effect on laser cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95fefe370f3bf984332102f2f7617518
https://doi.org/10.1002/1521-396x(200112)188:3<961::aid-pssa961>3.0.co
https://doi.org/10.1002/1521-396x(200112)188:3<961::aid-pssa961>3.0.co
Publikováno v:
IEEE Photonics Technology Letters. 18:1362-1364
A numerical model for calculation of the ultrafast gain properties of asymmetrical multiple-quantum-well (AMQW) semiconductor optical amplifiers is extended with more exact calculation of tunneling times for each barrier and different directions of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a42b76a2fef4ddecf12532f983c84a0
https://doi.org/10.1109/lpt.2006.877334
https://doi.org/10.1109/lpt.2006.877334
Publikováno v:
Opto-Electronics Review. 19
We present a theoretical analysis of the quantum efficiency of a resonant cavity enhanced InGaAs/GaAs p-i-n photodetector (PD) for the ultrashort optical connections. The numerical method of calculation of quantum efficiency combining a transfer matr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f277c8e67f4db62c0879b4fcee06b78a
https://doi.org/10.2478/s11772-011-0024-4
https://doi.org/10.2478/s11772-011-0024-4