Zobrazeno 1 - 10
of 45
pro vyhledávání: '"V.V. Harutunyan"'
Publikováno v:
Journal of Modern Physics. :1657-1662
The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are presented. It is found that there i
Autor:
V.V. Harutunyan, N.E. Grigoryan, Armenuhi A. Khachatryan, Hrant N. Yeritsyan, Aram A. Sahakyan, Vahan A. Sahakyan
Publikováno v:
Journal of Modern Physics. :1270-1276
While considerable progress has been achieved in radiation influence on the solid states, the quantitative assessment of defect production is very scarce. In this paper radiation defects studies in silicon crystals are briefly reviewed and comprehens
Autor:
E.A. Mughnetsyan, E.G. Zargaryan, V.S. Baghdasaryan, V.V. Harutunyan, A.G. Sarkisyan, S.K. Nikoghosyan
Publikováno v:
Solid State Phenomena. 200:267-271
The effect of direct transport current (I) and heat treatment on resistive properties of bismuth-based ceramic high-temperature superconducting oxides of various compositions is studied by temperature dependent resistivity (r) measurements at fixed p
Autor:
Hrant N. Yeritsyan, Karen Sh. Ohanyan, Aram A. Sahakyan, Agasi S. Hovhannisyan, N.E. Grigoryan, Narek A. Hakopyan, V.V. Harutunyan, Vahan A. Sahakyan, Sergej K. Nikoghosyan, Eleonora A. Hakhverdyan
Publikováno v:
Journal of Modern Physics. :180-184
Equipment has been designed and created for experimental simulation of space environment conditions of Geostationary orbit of the Earth. The following conditions are supported in the vacuum chamber having volume of 1.2 cubic meters: Vacuum 10-5 Torr.
Autor:
S.K. Nikoghosyan, Vahan A. Sahakyan, V. S. Avagyan, Aram A. Sahakyan, K. A. Movsisyan, S. Ohanyan, Hrant N. Yeritsyan, V.V. Harutunyan
Publikováno v:
Journal of Spacecraft and Rockets. 48:34-37
In this paper the influence of space environment factors on the properties of silicon single crystals was studied. The investigations were carried out using the space environment simulator at Yerevan Physics Institute. In the present study silicon co
Autor:
Sebastian Vielhauer, Evgeni Vasil'chenko, Vladimir N. Makhov, Ch. Lushchik, Marco Kirm, V.V. Harutunyan, E. Aleksanyan, Aleksandr Lushchik
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 266:2949-2952
Luminescence of Al2O3 single crystals doped with Cr3+ (∼500 ppm) (ruby), non-irradiated and irradiated by 50-MeV electrons, has been studied in a wide range of excitation energy (3.75–20 eV) at 9 K and compared with the luminescence of irradiated
Publikováno v:
Journal of luminescence 127, 397-403 (2007). doi:10.1016/j.jlumin.2007.01.019
The low-temperature 4f 2 5d→4f 3 fast emission of Nd 3+ from YAG:Nd 3+ has been studied under excitation by synchrotron radiation. Additionally, 4f 3 →4f 3 luminescence of Nd 3+ has been observed and assigned to transitions from the 2 F(2) 5/2 an
Publikováno v:
The European Physical Journal B. 12:35-38
The luminescence spectra of corundum monocrystals grown by different methods are investigated by means of a time-resolved spectroscopy method at temperatures 90 K and 300 K. The existence of fast and slow emission in the VUV luminescence spectra of i
Autor:
Vladimir N. Makhov, Eleonora A. Hakhverdyan, Tigran Hakobyan, V.V. Harutunyan, V. A. Grigoryan, V.A. Gevorkyan
Publikováno v:
physica status solidi (a). 171:623-629
The excitation spectra of luminescence in irradiated and non-irradiated corundum crystals are investigated by means of highly polarised synchrotron radiation. In the fundamental absorption region double-exciton peaks are observed at 90 K in the regio
Publikováno v:
physica status solidi (a). 167:237-241
Luminescence excitation spectra of Y 3 Al 5 O 12 single crystals in the region from 4 to 30 eV at tentperatures of 300 and 90 K were investigated using synchrotron radiation. In the region of fundamental absorption, excitation bands corresponding to