Zobrazeno 1 - 10
of 46
pro vyhledávání: '"V.V. Basanets"'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1, Pp 33-37 (2015)
Both contact resistivity of Au—Ti—Pd—n-Si ohmic contact and mechanism of current flow are studied in the 100—360 K temperature range. A method is proposed for reduction of error in determination of contact resistivity based on analysis of sta
Autor:
A. V. Zorenko, V. P. Kladko, Alexander Belyaev, V.V. Basanets, N. S. Boltovets, R. V. Konakova, A. V. Gutsul, V. V. Milenin, V. G. Ralchenko, Andrian Kuchuk, Ya. Ya. Kudrik
Publikováno v:
Technical Physics. 58:420-424
Measuring data for the parameters of a microstrip switching superhighfrequency integrated cir� cuit on a 100� μmthick polycrystalline diamond film are reported. Measurements are taken in the frequency range 3-7 GHz. It is shown that the decay in
Autor:
N. S. Boltovets, A. V. Zorenko, V. V. Milenin, T. V. Korostinskaya, Andrian Kuchuk, T. V. Kritskaya, R. V. Konakova, V. P. Kladko, Alexander Belyaev, A. B. Ataubaeva, N. V. Kolesnik, L. M. Kapitanchuk, Ya. Ya. Kudryk, V.V. Basanets
Publikováno v:
Semiconductors. 45:253-259
The thermal limits of the two-drift impact avalanche and transit-time (IMPATT) diode operating in the pulsed mode in the 8-mm wavelength region with a microwave power as high as 30–35 W have been estimated. It is shown that p-n junction overheat at
Autor:
V.F. Mitin, V. V. Kholevchuk, E.V. Mitin, V.V. Basanets, P.C. McDonald, N.S. Boltovets, F. Pavese
Publikováno v:
Cryogenics. 48:413-416
Dual function sensors (DFSs) for concurrent measurement of temperature and magnetic field in cryogenic applications have been developed and characterized. The DFS consists of a Ge-on-GaAs film resistance thermometer and an InSb-on-GaAs film Hall-effe
Autor:
Vitalii K. Dugaev, R. V. Konakova, V. V. Kholevchuk, P.V. Sorokin, I. Yu. Nemish, V.V. Basanets, P.C. McDonald, V.F. Mitin, N.S. Boltovets, E.V. Mitin, E. F. Venger, F. Pavese
Publikováno v:
Cryogenics. 47:474-482
Our paper discusses and reviews the properties of a range of semiconductor sensors, which have been developed for thermometry in cryogenic applications. The range of sensors developed includes a family of single and dual element resistance thermomete
Autor:
R. V. Konakova, N. V. Kolesnik, N. S. Boltovets, V.V. Basanets, Alexander Belyaev, Ya. Ya. Kudryk, A. B. Ataubaeva, A. V. Zorenko, V. V. Milenin
Publikováno v:
Scopus-Elsevier
The estimation of thermal limitations for pulse operation mode in the 8 mm-wave band of double-drift impact avalanche and transit-time (IMPATT) diodes with microwave power ≥20 W. It is shown that at pulse duration of 300 ns and amplitude of 11.3–
Autor:
V.V. Basanets, Alexander Belyaev, T.V. Krytskaya, Mykola S. Boltovets, Yu. V. Marunenko, A. V. Zorenko
Publikováno v:
2006 European Microwave Conference.
A tunable hybrid integrated oscillator for a 76divide77 GHz vehicle radar has been developed. Miniature packaged Si IMPATT diode is used as an active element. The oscillator output power is synchronized to the 10th harmonic of the VCO reference signa
Autor:
N.S. Boltovets, V.V. Basanets, V.F. Mitin, E.V. Mitin, I. Yu. Nemish, V. V. Kholevchuk, P.C. McDonald, F. Pavese
Publikováno v:
AIP Conference Proceedings.
This paper presents the characteristics of a new generation of temperature multifunction sensors based on germanium‐film resistance thermometers deposited on a semi‐insulating GaAs substrate: as dual‐range thermometers (dual‐element resistanc
Autor:
P.V. Sorokin, N.S. Boltovets, P.C. McDonald, V.F. Mitin, I. Yu. Nemish, Vitalii K. Dugaev, V.V. Basanets, F. Pavese, E.V. Mitin, E. F. Venger, V. V. Kholevchuk
Publisher Summary This chapter reviews the progress in the development of various semiconductor sensors for measurement of temperature and magnetic field that are intended for use in cryogenic engineering and low-temperature physics and have been dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3d833b4b93537c29d2c7e3fad3d707f
https://doi.org/10.1016/b978-008044559-5/50232-5
https://doi.org/10.1016/b978-008044559-5/50232-5
Autor:
V.V. Milenin, E.A. Soloviev, R.V. Konakova, A.V. Ovar, N.S. Boltovetes, A.M. Kurakin, V.V. Basanets, E.F. Venger
Publikováno v:
2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415).
We present the results of our investigation of silicon double-drift diodes intended for the millimeter wavelength range. Their ohmic contacts to the n/sup +/-area were based on the Pd/sub 2/Si-Ti-Pd-Au metallization, while those to the p/sup +/-area