Výsledky vyhledávání - "V.S.. Vassilev"

Zn(II)-ion-selective electrodes based on GeSe2–Sb2Se3–ZnSe glasses

Autor: S. V. Boycheva, V.S. Vassilev, S.H. Hadjinikolova

Publikováno v: Sensors and Actuators B: Chemical. 106:401-406

Zn(II)-ion-selective electrodes (Zn(II)-ISE) were created on the base of chalcogenide glasses (ChG) from the GeSe2–Sb2Se3–ZnSe system. New Zn(II)-ISEs include composite membranes and a construction from the “coated wire” type. The ISEs were b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce7a3cf016b36dd45c812510ec6fcf8b
https://doi.org/10.1016/j.snb.2004.06.038

Zobrazit plný text záznamu

On the glass formation in the semiconducting -Se-ZnTe, Se-Se-ZnSe and -ZnTe-ZnSe systems

Autor: Z.G. Ivanova, S. V. Boycheva, V.S.. Vassilev

Publikováno v: Journal of Physics D: Applied Physics. 32:529-532

The glass-forming regions in the -Se-ZnTe, Se-Se-ZnSe and -ZnTe-ZnSe chalcogenide systems have been determined. The temperatures of phase transformations (the glass transition, crystallization and melting), the density and the microhardness have been

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19c5a54c30321c0b47e38869126d1e07
https://doi.org/10.1088/0022-3727/32/4/023

Zobrazit plný text záznamu

Topological transition and rigidity percolation in Ge–Se(S)–Cd glasses

Autor: N Kirov, Silviya Boycheva, V.S.. Vassilev, Z.G. Ivanova

Publikováno v: Journal of Non-Crystalline Solids. :274-277

The glass-forming region in the Ge–Se–Cd system has been determined, where up to 12 at.% Cd can be introduced into the binary Ge 20 Se 80 composition. Specific features in the compositional dependence of the density, d , and microhardness, H m ,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::644a7d3a85a87195ce9f5efbef8a3b01
https://doi.org/10.1016/s0022-3093(98)00385-8

Zobrazit plný text záznamu

On the glass formation in the GeSCd and GeS2CdI systems

Autor: V.S. Vassilev, Z.G. Ivanova

Publikováno v: Journal of Physics and Chemistry of Solids. 58:573-576

For the first time, the glass-forming ability in the GeSCd and GeS 2 CdI systems has been studied. The glass-forming boundaries and the basic physicochemical parameters (temperatures of glass transition, crystallization and melting, densi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::faf259f42df018655d3e18a906c60125
https://doi.org/10.1016/s0022-3697(96)00167-9

Zobrazit plný text záznamu

Photoinduced transformations in amorphous GeS2-based thin films

Autor: Z.G. Ivanova, V.S Vassilev

Publikováno v: Journal of Non-Crystalline Solids. :439-442

A study of photoinduced optical changes in some new GeSBi and GeS2GaI amorphous compositions has been performed. The known glass-forming ability in the GeSBi system has been extended by obtaining glassy (GeS2)100 - xBix (x = 4, 8, 1

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b503d2e3d76916e0809295df7bc0cdef
https://doi.org/10.1016/0022-3093(95)00388-6

Zobrazit plný text záznamu

New IR-transmitting chalcohalide glasses

Autor: Z.G. Ivanova, V.S Vassilev, K. G. Vassileva

Publikováno v: Journal of Non-Crystalline Solids. 162:123-127

The glass-forming region in the GeS 2 GaI system has been determined and its limits are 32 at.% Ga and 60 at.% I. The basic physicochemical parameters (glass transition temperature, density and microhardness) of the glasses have been measured.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe6b104920e32cc7df2eae835fa9d54a
https://doi.org/10.1016/0022-3093(93)90747-l

Zobrazit plný text záznamu

Glass-forming tendency, physiocochemical properties and rigidity percolation of the Ge-Se-Fe system

Autor: V.S. Vassilev, Z.G. Ivanova

Publikováno v: Journal of Physics and Chemistry of Solids. 58:1347-1349

The glass-forming region in the chalcogenide Ge-Se-Fe system has been determined. Properties such as the glass transition temperature, density, molar volume, and microhardness have been studied. The extrema in the property-composition dependence at a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fc2bc44877da1013c6e22f6bb7cb75c1
https://doi.org/10.1016/s0022-3697(97)00032-2

Zobrazit plný text záznamu

Microstructural features in amorphous Ge-S-Ga semiconductors

Autor: V. Pamukchieva, V.S. Vassilev, Z.G. Ivanova

Publikováno v: 1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351).

Variation of the micro-voids volume (Vh), their formation energy (Eh), and module of elasticity (E) with the composition of amorphous Ge-S-Ga films (as-evaporated and UV-exposed) has been studied. Most pronounced change in these parameters after illu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2faff528f01aecb23613a32cd93b51b6
https://doi.org/10.1109/smicnd.1998.733782

Zobrazit plný text záznamu

Magnetic field influence on the Ag/sub 2/Te crystals magnetic resistance

Autor: L. Koroleva, V.A. Vachkov, N.T. Dishovsky, S.V. Boycheval, P.P. Petrov, V.S. Vassilev

Publikováno v: Proceedings of the Second International Symposium of Trans Black Sea Region on Applied Electromagnetism (Cat. No.00TH8519).

Summary form only given. The influence of inhomogeneities in the distribution of point defects on the field and temperature dependencies of the Ag/sub 2/Te crystal magnetic resistance is investigated. It is found that in a strong magnetic field at 30

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::48dd6da9778e5ef58d998d84b98dce54
https://doi.org/10.1109/aem.2000.943248

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání