Zobrazeno 1 - 10
of 90
pro vyhledávání: '"V.R. Deline"'
Publikováno v:
Surface Science. 250:112-122
Secondary ion mass spectrometry (SIMS) is used to measure quantitatively the thickness of thin (6–160 A) polyperfluoroether films on silicon and gold surfaces. Linear relationship between ellipsometrically measured thicknesses and integrated SIMS s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6950e1d6f93bb8c354d44b0f8f9dca9
https://doi.org/10.1016/0039-6028(91)90714-4
https://doi.org/10.1016/0039-6028(91)90714-4
Publikováno v:
IEEE Transactions on Magnetics. 27:5088-5090
Migration of lubricant from the porous magnetic coating and underlayer to the surface in particulate magnetic recording media is studied by dynamic secondary ion mass spectrometry. The lubricant thickness on the surface of particulate media is evalua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::842e3cf6c903110d592f11c2bdc8090a
https://doi.org/10.1109/20.278749
https://doi.org/10.1109/20.278749
Publikováno v:
Journal of Non-Crystalline Solids. :273-277
We report the results of glow discharge optical spectroscopy (GDOS) measurements of total dopant concentrations in a-Si:H films. Significant differences (up to a factor of 4.8) were found between the ratio of boron to silicon of the films and that of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd0c258c632b663cc38dfa6f1264219
https://doi.org/10.1016/0022-3093(80)90606-7
https://doi.org/10.1016/0022-3093(80)90606-7
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :329-333
The diffusion of arsenic and boron dopants resulting from rapid thermal annealing (RTA) in a tungsten-halogen lamp heater have been compared for implantations into 〈100〉 and 〈111〉 Si wafers. Random direction implantations have been performed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dad8a002f48705c54e75cb5c598326f
https://doi.org/10.1016/0168-583x(85)90575-0
https://doi.org/10.1016/0168-583x(85)90575-0
Publikováno v:
IEEE Electron Device Letters. 1:35-37
The redistribution of Cr is shown to be responsible for the formation of deep trails in the electron density profiles of certain semi-insulating GaAs substrates following Se ion implantation and annealing, and for the formation of spurious n-type con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bedc07bc192c53a3857e70901a3553e0
https://doi.org/10.1109/edl.1980.25221
https://doi.org/10.1109/edl.1980.25221
Publikováno v:
Solid-State Electronics. 26:565-567
Chronium redistribution resulting in residual donor decompensation has been proposed to explain near-surface type-conversion in furnace-annealed, semi-insulating GaAs. We report here correlations of Cr depth profiles and residual donor atom densities
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80c12cb94bf43a1c852ab1dee0eb1a9e
https://doi.org/10.1016/0038-1101(83)90172-7
https://doi.org/10.1016/0038-1101(83)90172-7
Akademický článek
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Publikováno v:
IEEE Transactions on Electron Devices. 26:1853-1853
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9fd71950bf255a3bcc4721923218efb
https://doi.org/10.1109/t-ed.1979.19771
https://doi.org/10.1109/t-ed.1979.19771
Publikováno v:
IEEE Transactions on Electron Devices. 26:1853-1853
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab1196805ce6a5337c39d0b68a99df53
https://doi.org/10.1109/t-ed.1979.19773
https://doi.org/10.1109/t-ed.1979.19773
Akademický článek
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