Zobrazeno 1 - 10
of 59
pro vyhledávání: '"V.R. Balakrishnan"'
Autor:
V.R. Balakrishnan, S. Dayal, Janesh K Kaushik, B.S. Panwar, Udayan Kumar, D. Mongia, R. Muralidharan
Publikováno v:
Thin Solid Films. 612:147-152
This paper reports the study of surface-related mechanisms to explain the high reverse leakage current observed in the in-house fabricated Si3N4 passivated AlGaN/GaN High Electron Mobility Transistors. We propose that the Si3N4/AlGaN interface in the
Publikováno v:
Semiconductor Science and Technology. 35:085035
A two-dimensional analytical model involving a multi-phonon tunneling process at high static electric fields in AlGaN/GaN HEMTs to explain the drain current collapse has been attempted. This model successfully explains the sudden recovery of drain cu
Publikováno v:
Canadian Journal of Chemistry. 89:549-554
A new biaryl-based bisazide has been used to crosslink poly(3-hexylthiophene), a conducting polymer useful for organic electronics. Crosslinking was monitored using infrared spectroscopy and film morphology was studied using scanning electron microsc
Publikováno v:
Synthetic Metals. 160:2061-2064
Diode devices (glass/ITO/polymer/Al) have been fabricated using poly (3-hexylthiophene) (P3HT) crosslinked with two different biaryl crosslinkers. Crosslinking was performed by exposing the thin films with different wt% of crosslinker to UV irradiati
Publikováno v:
Bulletin of the Korean Chemical Society. 30:2895-2898
C-NMR values have been reassigned. Dense and granular thin films of dehydrodivanillin have been grown by sublimation under high vacuum and studied using Scanning Electron Microscopy (SEM), electrical and optical techniques. The transmittance spectra
Publikováno v:
Pramana. 71:579-589
Organic thin film transistors (OTFTs) were fabricated using pentacene as the active layer with two different gate dielectrics, namely SiO2 and poly(methyl methacrylate) (PMMA), in top contact geometry for comparative studies. OTFTs with SiO2 as diele
Autor:
Somnath C. Roy, R. K. Manchanda, Mukesh Chander Bhatnagar, G. L. Sharma, S.B. Samanta, V.R. Balakrishnan
Publikováno v:
Materials Chemistry and Physics. 100:404-410
The effect of pre-sintering temperature on the activation energies of dc and ac conduction in sol–gel spin-coated Ba0.5Sr0.5TiO3 (BST) thin films is reported in this paper. Layer by layer coating of BST sol on Pt/TiN/SiO2/Si substrates was done wit
Autor:
H. P. Vyas, V.R. Balakrishnan, B. L. Sharma, Ravinder Pal, V. Dhar, Vanya Srivastav, A. Malik
Publikováno v:
IEEE Transactions on Electron Devices. 53:2727-2734
A compositionally graded surface layer has been created for the passivation of Hg1-xCdxTe photodiodes. The graded CdTe-Hg1-xCdxTe interface was created by deposition of CdTe and subsequent annealing. It was found that the composition gradient and wid
Publikováno v:
Semiconductor Science and Technology. 20:783-787
Measurements of low-frequency transconductance dispersion at different temperatures and conductance deep level transient spectroscopic(CDLTS) studies of an AlGaAs/InGaAs pseudomorphic HEMT were carried out. The experimental results show the presence
Autor:
Mukesh Chander Bhatnagar, G. L. Sharma, V.R. Balakrishnan, R. K. Manchanda, Somnath C. Roy, S.B. Samanta
Publikováno v:
Applied Surface Science. 236:306-312
Ba0.5Sr0.5TiO3 thin films have been deposited by sol–gel spin coating technique and effect of pH of the precursor sol on the electrical and optical properties has been investigated. Thin films of about 480 nm thickness were deposited on platinised