Zobrazeno 1 - 10
of 108
pro vyhledávání: '"V.N. Mordkovich"'
Publikováno v:
Instruments and Experimental Techniques. 59:724-727
The characteristics of thin-film Si MISIM magnetic transistors with a built-in accumulated channel and partially depleted quasi-neutral area are studied. The design of transistors is integrated with a Hall element. It is shown experimentally that tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7318b647f135d0dc7f9d889f52049a3d
https://doi.org/10.1134/s0020441216050109
https://doi.org/10.1134/s0020441216050109
Publikováno v:
Technical Physics Letters. 42:71-74
We describe a magnetosensitive device consisting of a combination of a thin-film Si transistor with built-in conducting channel (fabricated by the silicon-on-insulator technology) and a Hall-type sensor (HS). The transistor has a double-gate field co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11a03aeca245caffca21fc67b42bbae7
https://doi.org/10.1134/s1063785016010272
https://doi.org/10.1134/s1063785016010272
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 365:141-145
The SIMOX commercial sample (Ibis corp.) was investigated by a high-resolution X-ray diffraction (HRXRD), a high-resolution transmission electron microscopy (HRTEM) and an Auger electron spectroscopy (AES) to determine its actual parameters (the thic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::206f14f4cbf50be63bd964281786b651
https://doi.org/10.1016/j.nimb.2015.08.050
https://doi.org/10.1016/j.nimb.2015.08.050
Publikováno v:
Proceedings of the Scientific-Practical Conference "Research and Development-2016" ISBN: 9783319628691
On the example of the magnetic field sensor shown that the developed sensing element type thin-film SOI MISIM transistor with built-in channel provides the creation of sensors with substantially improved electrical characteristics (magnetic sensitivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eadbb638827d7740c3c025eb9770055
https://doi.org/10.1007/978-3-319-62870-7_4
https://doi.org/10.1007/978-3-319-62870-7_4
Publikováno v:
Procedia Engineering. 120:1197-1200
The construction of Si Hall element formed in thin Si layer of SOI structure is considered. Hall element is a part of SOI FET accumulation mode transistor with built-in channel and MISIM field control systems. Such Hall element characterized by wide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::745da5853c2256b63361ac11d188703b
Autor:
Kirill D. Shcherbachev, V. I. Zinenko, D. M. Pazhin, M. I. Voronova, Vladimir T. Bublik, V.N. Mordkovich, Yu. A. Agafonov
Publikováno v:
Crystallography Reports. 58:1030-1036
The influence of the implantation of silicon single crystals by fluorine, nitrogen, oxygen, and neon ions on the distribution of strain and the static Debye-Waller factor in the crystal lattice over the implanted-layer depth has been investigated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ad3926d3525c08192a16e8d97dd5868
https://doi.org/10.1134/s1063774513070183
https://doi.org/10.1134/s1063774513070183
Publikováno v:
Instruments and Experimental Techniques. 58:637-639
Autogenerator magnetic field converter circuits based on a field-effect Hall sensor (FEHS), are considered. The feasibility of creating microelectronic high-sensitive magnetic-field sensors with a frequency output and regulated operating frequency is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79fe141d3b40401515adab1e564fda59
https://doi.org/10.1134/s0020441215040211
https://doi.org/10.1134/s0020441215040211
Publikováno v:
Instruments and Experimental Techniques. 55:701-708
The possibilities of controlling the characteristics of field-effect Hall probes (FEHPs) that are based on “silicon-on-insulator” structures, whose design contains a field system of the “metal-insulator-semiconductor-insulator-metal” (MISIM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee3a34746c74518ca6b4a9ce67bc78f
https://doi.org/10.1134/s0020441212060024
https://doi.org/10.1134/s0020441212060024
Publikováno v:
Semiconductors. 45:738-742
Specific features of formation of radiation defects in thin silicon layer of silicon-on-insulator (SOI) structures have been studied. It is shown that there are differences between variations in the structural and electrical properties of the thin si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8c1f056ca5602f2eb000a10053d4432
https://doi.org/10.1134/s1063782611060224
https://doi.org/10.1134/s1063782611060224
Publikováno v:
Proceedings SENSOR 2015.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5db0ccc73253d9d97913ca196d2af8f
https://doi.org/10.5162/sensor2015/p9.3
https://doi.org/10.5162/sensor2015/p9.3