Zobrazeno 1 - 1
of 1
pro vyhledávání: '"V.N. Lozovskiy"'
Publikováno v:
Materials Science Forum. 843:46-51
The article includes the analysis of the features related to local doping of silicon using electrically active doping agents by thermomigration of binary and ternary liquid zones as compared to doping by diffusion. The concentration range of doping b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b38893a0ac763300a562d445f09b1df
https://doi.org/10.4028/www.scientific.net/msf.843.46
https://doi.org/10.4028/www.scientific.net/msf.843.46
