Zobrazeno 1 - 10
of 330
pro vyhledávání: '"V.N Shastin"'
Publikováno v:
Semiconductors. 54:1127-1133
The wave functions of low-lying 1s (A1), 2s, 2p0, 2p±, and 3p0 states of P, As, and Sb shallow donor centers in germanium are calculated in the scope of the envelope-function approximation taking into account the short-range impurity potential. The
Publikováno v:
Semiconductors. 54:961-965
The dynamics of the formation and decay of coherent states of shallow impurity centers in crystalline germanium resonantly excited by a pair of laser pulses, following one another with a time delay is analyzed theoretically. The required laser-radiat
Autor:
Andreas Pohl, R.Kh. Zhukavin, Nils Deßmann, V. V. Tsyplenkov, Sergey Pavlov, Nickolay Abrosimov, Helge Riemann, Heinz-Wilhelm Hübers, K. A. Kovalevsky, V.N. Shastin
Publikováno v:
Semiconductors, 54, 969-974
Semiconductors, 54, 8, pp. 969-974
Semiconductors, 54, 8, pp. 969-974
The results of experimental and theoretical investigations of terahertz-emission-spectrum tuning by means of uniaxial stress of a silicon crystal doped with shallow bismuth donors are presented for the case of intracenter optical excitation. The freq
Publikováno v:
Materials Science and Engineering: B. 286:115979
Akademický článek
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Akademický článek
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Autor:
Vasily V. Gerasimov, P. A. Bushuikin, Heinz-Wilhelm Hübers, N. V. Abrosimov, S.G. Pavlov, V.N. Shastin, Yu. Yu. Choporova, Boris A. Knyazev, V. V. Tsyplenkov, R.Kh. Zhukavin, K. A. Kovalevskii
Publikováno v:
JETP Letters. 110:677-682
The relaxation times of excited states of arsenic dopant in germanium at cryogenic temperatures T < 15 K have been experimentally studied by the optical pump-probe method using radiation of a free-electron laser. Two variants of the excitation of imp
Autor:
V.N. Shastin, V. V. Tsyplenkov
Publikováno v:
Semiconductors. 53:1334-1339
Long-wavelength acoustic phonon-assisted relaxation rates for the excited 1s(T), 2p0, 2s, 3p0, 2p±, 4p0, and 3p± states of antimony donors in a germanium crystal are calculated. The effect of the uniaxial compressive strain of a crystal along the [
Autor:
H.-W. Hübers, K. A. Kovalevsky, R.Kh. Zhukavin, V.V. Tsyplenkov, N. Deßmann, V.N. Shastin, Yu. Yu. Choporova, P. A. Bushuikin, Nickolay Abrosimov, S.G. Pavlov, Boris A. Knyazev
Publikováno v:
SYNCHROTRON AND FREE ELECTRON LASER RADIATION: Generation and Application (SFR-2020).
The results of investigations of relaxation processes of donor bound electrons in the germanium doped by arsenic at cryogenic temperatures are presented. The lifetimes of p-type excited states of a donor were measured by pump-probe technique utilizin
Autor:
V. D. Kukotenko, R.Kh. Zhukavin, V.N. Shastin, Yu. Yu. Choporova, N. V. Abrosimov, Heinz-Wilhelm Hübers, K. A. Kovalevsky, V. V. Tsyplenkov, S.G. Pavlov, Boris A. Knyazev
The relaxation times of the lower p states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied. Measurements are performed by the pump–probe method, using free-electron laser radiation. The st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ebfa6b82236611fdb3209b5e79e5409
https://elib.dlr.de/136639/
https://elib.dlr.de/136639/