Zobrazeno 1 - 10
of 24
pro vyhledávání: '"V.M. Sánchez Reséndiz"'
Si−doped In0.145Ga0.855As0.123Sb0.877: A novel p−type quaternary alloy with high crystalline quality
Autor:
G. Villa-Martínez, D.M. Hurtado-Castañeda, Y.L. Casallas-Moreno, M. Ramírez-López, M.A. González-Morales, M.L. Gómez-Herrera, J.S. Arias-Cerón, V.M. Sánchez Reséndiz, P. Rodríguez-Fragoso, J.L. Herrera-Pérez, J.G. Mendoza-Álvarez
Publikováno v:
Solid State Sciences. 123:106797
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83124e726c93765d7a0037c7013890d8
https://doi.org/10.1016/j.solidstatesciences.2021.106797
https://doi.org/10.1016/j.solidstatesciences.2021.106797
Autor:
V.M. Sánchez-Reséndiz, Y. L. Casallas-Moreno, Esteban Mota, A. G. Hernandez, Máximo López-López, Yu. Kudriavtsev, A. Escobosa-Echavarria, C.A. Hernández-Gutiérrez
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 388:35-40
The structural, chemical, and electrical characteristics of In + ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ce82dd82d724748f01aaa3ef2eef523
https://doi.org/10.1016/j.nimb.2016.11.001
https://doi.org/10.1016/j.nimb.2016.11.001
Synthesis of CdTe Quantum Dots in Aqueous Solution and Their Optical and Structural Characterization
Autor:
M. Ortega-Avilés, Adolfo López Mateos, D. F. México, A. Hernández-Hernández, M. Ortega-López, Y. Matsumoto-Kuwabara, V.M. Sánchez-Reséndiz, Centro de Investigación, M. A. Pérez-Guzmán, A. M. Espinoza-Rivas, M. Meléndez-Lira, C. D. Gutiérrez-Lazos, Enrique Rosendo
Publikováno v:
Science of Advanced Materials. 4:604-608
We describe the optical and structural characterization of highly luminescent thioglycolic acid–stabilized CdTe quantum dots (CdTe-QD) synthesized in water. Samples prepared under different reflux times were characterized using transmission electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::854f096651e70f62beac9d34f721b0a0
https://doi.org/10.1166/sam.2012.1326
https://doi.org/10.1166/sam.2012.1326
Autor:
Máximo López-López, C. Guarneros, A. Ponce-Pedraza, V.M. Sánchez-Reséndiz, A. Guillén-Cervantes, Z. Rivera-Alvarez
Publikováno v:
Applied Surface Science. 258:1267-1271
GaN thin films grown by MOCVD on (0 0 0 1) Al 2 O 3 substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::109c838289c5501340467345d17428a6
https://doi.org/10.1016/j.apsusc.2011.09.089
https://doi.org/10.1016/j.apsusc.2011.09.089
Autor:
A. Escobosa, V. P. Lesnikov, V. V. Podolski, V.M. Sánchez-Reséndiz, K. D. Moiseev, O. Kudriavtseva, Yu. Kudriavtsev
Publikováno v:
Semiconductors. 45:771-775
Nanotechnology of obtainment of diluted magnetic semiconductors based on the GaInAsSb compounds is developed using the laser deposition of Mn atoms on the surface of the epitaxial layer of a quaternary alloy obtained by liquid-phase epitaxy. Fabricat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c29f30396a54e9252ff53b9b857de253
https://doi.org/10.1134/s1063782611060145
https://doi.org/10.1134/s1063782611060145
Publikováno v:
Thin Solid Films. 519:2255-2261
We investigate optical, structural and electrical properties of undoped GaN grown on sapphire. The layers were prepared in a horizontal reactor by low pressure metal organic chemical vapor deposition at temperatures of 900 °C and 950 °C on a low te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4cb7ecbd863f884d06d82ea339b28da
https://doi.org/10.1016/j.tsf.2010.10.053
https://doi.org/10.1016/j.tsf.2010.10.053
Autor:
J.J. Cayente-Romero, M.L. Albor-Aguilera, V.M. Sánchez-Reséndiz, E. Barrera-Calva, M. Ortega-López, Yasuhiro Matsumoto
Publikováno v:
Thin Solid Films. 518:1821-1824
AgInSnS 4 thin films were prepared by adding a tin salt to the starting solution used for preparing chalcopyrite AgInS 2 thin films by spray pyrolysis The AgInSnS 4 films were grown at substrate temperatures in the 300–400 °C range, using an alcoh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::636a6117f80ce21a21f36c488a2784ef
https://doi.org/10.1016/j.tsf.2009.09.040
https://doi.org/10.1016/j.tsf.2009.09.040
Akademický článek
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Autor:
A. Guillén-Cervantes, V.H. Méndez-García, V.M. Sánchez-Reséndiz, Luis Zamora-Peredo, E. Cruz-Hernández, Y. Kudriatsev, J. S. Rojas-Ramírez, Máximo López-López, A. Pulzara-Mora, R. Contreras-Guerrero, Z. Rivera-Alvarez, S. Gallardo-Hernández
Publikováno v:
Journal of Crystal Growth. 311:1666-1670
AlGaAs/GaAs quantum wells (QWs) structures were grown by molecular beam epitaxy (MBE) on semi-insulating- and Si-doped GaAs (1 0 0) substrates subjected to different surface treatments. The substrate treatments employed were: (a) H 2 SO 4 -based chem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e59178fa40d2ff2d3b47192109737e6
https://doi.org/10.1016/j.jcrysgro.2008.11.010
https://doi.org/10.1016/j.jcrysgro.2008.11.010
Autor:
V.M. Sánchez-Reséndiz, A. Guillén-Cervantes, Máximo López-López, Z. Rivera-Alvarez, I. Koudriavtsev
Publikováno v:
Applied Surface Science. 255:4742-4746
GaAs (1 0 0) substrates prepared in a quartz chamber under a H2/As4 flux, and then exposed to air were used for the subsequent growth of GaAs–AlGaAs single quantum wells by molecular beam epitaxy. The substrates prepared by this method showed atomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32c89e95035f9a6bbd4938fe409f8b05
https://doi.org/10.1016/j.apsusc.2008.09.002
https://doi.org/10.1016/j.apsusc.2008.09.002