Zobrazeno 1 - 10
of 260
pro vyhledávání: '"V.M. Puzikov"'
Autor:
L. Grin, V.P. Kandidov, I. Blonskyi, V.M. Puzikov, Svyatoslav A Shlenov, A. A. Dergachev, V. Kadan
Publikováno v:
Scopus-Elsevier
Autor:
V.M. Puzikov, M. B. Kosmyna, D. Yu. Sugak, B. P. Nazarenko, Yu. N. Gorobets, A.N. Shekhovtsov, Andriy Luchechko
Publikováno v:
Journal of Crystal Growth. 318:687-690
PbMoO 4 :Nd 3+ and PbWO 4 :Nd 3+ single crystals were grown by the Czochralski method. The Nd 3+ doping was performed by means of isostructural and non-isostructural compounds. Co-doping was also used. The spectral-kinetic characteristics of PbMoO 4
Autor:
A.V. Semenov, V.M. Puzikov
Publikováno v:
Vacuum. 85:672-676
Changes in the temperature of nanocrystalline SiC film surface were measured during film growth by direct deposition of carbon and silicon ions onto substrates at ∼800 °С. It has been found that the initial stage of the film growth is characteriz
Autor:
Nickolai I. Klyui, V.G. Litovchenko, A.V. Semenov, O. B. Korneta, Yu. M. Litvin, V.M. Puzikov, A.A. Evtukh
Publikováno v:
Applied Surface Science. 215:237-241
The emission properties of silicon carbide films were investigated. The SiC films were deposited from separated ion beams. The deposition of the films on silicon tips allows us to improve field emission strongly. The doping of silicon carbide films w
Autor:
Jan Šulc, Helena Jelínková, Valery V. Badikov, V.M. Puzikov, Michal Němec, Michal Jelínek, V. K. Komar, A. S. Gerasimenko, Maxim E. Doroshenko
Publikováno v:
SPIE Proceedings.
The aim of the presented work is to demonstrate operation of a Cr:ZnMgSe laser pumped by a Er:YLF laser. Laser output characteristics are compared with a Cr:ZnSe laser operated under similar conditions. Pumping 1.73 μm Er:YLF laser (Er:YLF rod 80 mm
Autor:
V.M. Puzikov, A.V. Tolmachev, V. B. Kravchenko, A.G. Doroshenko, N. A. Matveevskaya, Pavel V. Mateychenko, D.Yu. Kosyanov, R.P. Yavetskiy, Yu. L. Kopylov, S.V. Parkhomenko
Publikováno v:
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE).
Nd:YAG ceramics were fabricated by solid-state reactive sintering of commercial powders and vacuum sintering of custom made co-precipitated nanopowders. The densities, microstructure, average grain size, residual porosity, optical transmittances of t
Autor:
A.N. Shekhovtsov, E. A. Vovk, V.M. Puzikov, A.V. Tolmachev, B. P. Nazarenko, Z. P. Sergienko, M. B. Kosmyna, R.P. Yavetskiy
Publikováno v:
Ceramic Materials and Components for Energy and Environmental Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b6112fbee25029f98647a6907fbd31c
https://doi.org/10.1002/9780470640845.ch85
https://doi.org/10.1002/9780470640845.ch85
Autor:
Tasoltan T. Basiev, Helena Jelínková, V.M. Puzikov, V. K. Komar, A. S. Gerasimenko, V. V. Osiko, Petr Koranda, Maxim E. Doroshenko
Publikováno v:
CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
Divalent chromium doped AIIBVI materials are attracting more and more attention during last years as perspective materials for development of efficient tunable mid IR solid-state lasers for different applications. Our recent researches on development
Autor:
A.V. Semenov, V.M. Puzikov
Publikováno v:
Surface and Coatings Technology. 47:445-454
The process of deposition of single-phase diamond-like carbon (DLC) films was studied by employing a device capable of generating beams of mass-separated carbon ions. Structural investigation of the films was accomplished at different values of such
Autor:
A.G. Gontar, S.N. Dub, V.S. Lysenko, V. I. Kushnirenko, A.V. Rusavsky, A.N. Nazarov, V.M. Puzikov, A.V. Semenov, O.M. Kutsay, A. V. Vasin, S.P. Starik
Publikováno v:
NATO Science Series II: Mathematics, Physics and Chemistry ISBN: 1402034695
Amorphous silicon carbon films having near stochiometric composition had been deposited by (i) reactive magnetron sputtering of silicon target in argon-methane gas mixture (a-SiC:H films) and (ii) ion-plasma deposition using polycrystalline silicon c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d76dccd9e56c40d75a51b67d149482ca
https://doi.org/10.1007/1-4020-3471-7_34
https://doi.org/10.1007/1-4020-3471-7_34