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Publikováno v:
Applied Surface Science. 483:895-900
The evolution of the escape probability of hot and thermalized photoelectrons to vacuum from GaAs(001) with adsorbed layers of cesium and oxygen under the transition from the negative to positive effective electron affinity is studied by photoemissio
Autor:
A G Zhuravlev, V.L. Alperovich
Publikováno v:
Applied Surface Science. 461:10-16
Photoreflectance and photoemission quantum yield spectroscopies are used for the experimental study of direct photoemission, photon-enhanced thermionic emission (PETE), surface band bending and photovoltage, effective electron affinity, and probabili
Publikováno v:
Applied Surface Science. 561:149987
The effect of jump in electron mass on the electron transfer through interfaces with positive and negative potential steps is considered in relation with practically important photoemission and photon-enhanced thermionic emission from semiconductors
Autor:
I.O. Akhundov, A.S. Kozhukhov, Alexander V. Latyshev, D M Kazantsev, D.V. Sheglov, V.L. Alperovich
Publikováno v:
Applied Surface Science. 406:307-311
The GaAs(001) step-terraced surface relief is studied under oxidation, wet oxide removal and thermal smoothing by ex situ atomic force microscopy with local monitoring of specific atomic steps using lithographic marks for surface area localization. O
Publikováno v:
JETP Letters. 105:686-690
The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum
Autor:
V.L. Alperovich, A G Zhuravlev
Publikováno v:
Applied Surface Science. 395:3-8
The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in t
Publikováno v:
Acta Materialia
Acta Materialia, Elsevier, 2019, 175, pp.206-213. ⟨10.1016/j.actamat.2019.06.018⟩
Acta Materialia, Elsevier, 2019, 175, pp.206-213. ⟨10.1016/j.actamat.2019.06.018⟩
The interaction between vicinal atomic steps and slip traces – straight monatomic steps produced on a crystal surface by the emergence of dislocations – is experimentally investigated and compared to Monte-Carlo simulations. Near the point of app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb07a2280841c7cdaec8b462b453485b
https://hal.archives-ouvertes.fr/hal-03480685
https://hal.archives-ouvertes.fr/hal-03480685
Publikováno v:
SSRN Electronic Journal.
The interaction between vicinal atomic steps and slip traces - straight monatomic steps produced on a crystal surface by the emergence of dislocations - is experimentally investigated and compared to Monte-Carlo simulations. Near the point of apparen
Publikováno v:
Applied Surface Science. 540:148281
The Langmuir evaporation (LE) of GaAs vicinal surfaces with various crystallographic orientations is analyzed at the atomistic level by Monte Carlo simulation. The evolution of the surface morphology and LE characteristics (gallium and arsenic evapor