Zobrazeno 1 - 10
of 236
pro vyhledávání: '"V.I. Vdovin"'
Autor:
V.I. Vdovin, V.A. Antonov, M.A. Ilnitsky, Konstantin V. Rudenko, A. V. Miakonkikh, Vladimir Popov, I.E. Tyschenko
Publikováno v:
Solid-State Electronics. 159:63-70
The formation of a multi-crystalline HfO2 film, containing the ferroelectric phase OII (Pmn21) after a high-temperature annealing at 1100 °C, was experimentally observed by HREM for the first time in silicon-on-sapphire (SOS) structures obtained by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fafb6bf4064f20252236ba25e43d9cc3
https://doi.org/10.1016/j.sse.2019.03.036
https://doi.org/10.1016/j.sse.2019.03.036
Publikováno v:
Semiconductors. 52:1341-1348
The continuous transfer of (001)Si layers 0.2–1.7 μm thick by implanted hydrogen to the c-sapphire surface during direct bonding at high temperatures of 300–500°C is demonstrated for the first time. The formation of an intermediate silicon-oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::841751ff861103254d03a187f0a35661
https://doi.org/10.1134/s1063782618100160
https://doi.org/10.1134/s1063782618100160
Autor:
S.G. Simakin, Konstantin V. Rudenko, V.A. Antonov, A.K. Gutakovskii, V.P. Popov, V.I. Vdovin, F.V. Tikhonenko, S.M. Tarkov
Publikováno v:
Materials Today Communications. 28:102498
The formation of gettering layers in CO+ ion implanted (COII) n-type (001) silicon wafers with a layer of thermal SiO2 and silicon-on-insulator (SOI) was first demonstrated before and after the processes of direct bonding and thermal cleavage/transfe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e25ac440ea5f6738898e354dbd1236a
https://doi.org/10.1016/j.mtcomm.2021.102498
https://doi.org/10.1016/j.mtcomm.2021.102498
Autor:
Anton K. Gutakovskii, Vladimir A. Volodin, A. O. Zamchiy, E. A. Baranov, Ilya V. Korolkov, V.I. Vdovin, I.E. Merkulova
Publikováno v:
Materials Letters. 293:129723
Aluminum-induced crystallization of a-SiO1.8 in the layer exchange mode was carried out. Annealing of a “SiO2 substrate/Al/a-SiO2 membrane/a-SiO1.8” stacked structure at 550 °C led to the formation of a continuous polycrystalline Si (poly-Si) th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e0fa71697b5f8ecf9f2798d6caa183b
https://doi.org/10.1016/j.matlet.2021.129723
https://doi.org/10.1016/j.matlet.2021.129723
Autor:
Konstantin V. Rudenko, V.I. Vdovin, A. V. Miakonkikh, Vladimir Popov, Valentin Antonov, Ida E. Tyschenko, Anton Gutakovskiy
Publikováno v:
Solid-State Electronics. 168:107734
PEALD-grown hafnia and alumina buried oxide (BOX) stacks in silicon-on-insulator (SOI) structures were produced and characterized by XTEM and pseudo-MOSFET techniques. The ferroelectric phases of hafnia were observed by XTEM and SAED. It was shown th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fef08b123ef5aa0f6d2cb20f5a988890
https://doi.org/10.1016/j.sse.2019.107734
https://doi.org/10.1016/j.sse.2019.107734
Autor:
Anton K. Gutakovskii, V.I. Vdovin, E.A. Maximovskiy, Vladimir A. Volodin, Ilya V. Korolkov, E. A. Baranov, A. O. Zamchiy
Publikováno v:
Materials Letters. 261:127086
A novel fabrication method of polycrystalline silicon (poly-Si) films by aluminum-induced crystallization of amorphous silicon suboxide (a-SiO0.2) material via the inverted aluminum-induced layer exchange (ALILE) mechanism on glass substrates is pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e25bd7afbf3e5f18bde25afdbf833de6
https://doi.org/10.1016/j.matlet.2019.127086
https://doi.org/10.1016/j.matlet.2019.127086
Autor:
Anton K. Gutakovskii, S. Ya. Khmel, V.I. Vdovin, Vladimir A. Volodin, A. O. Zamchiy, E. A. Baranov
Publikováno v:
Applied Physics A. 124
Polycrystalline silicon (poly-Si) thin films are fabricated by aluminum-induced crystallization (AIC) of amorphous silicon suboxide (a-SiOx, x = 0.22) at 550 °C for 20 h. AIC of a-SiO0.22 via thermal annealing of a-SiO0.22/Al bilayer structures lead
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c3be16efe6f9bcc16f99baf8d36705
https://doi.org/10.1007/s00339-018-2070-y
https://doi.org/10.1007/s00339-018-2070-y
Autor:
D. V. Gulyaev, V.I. Vdovin, Vladimir A. Volodin, Alexander A. Shklyaev, Masao Sakuraba, J. Murota, A. S. Kozhukhov
Publikováno v:
Thin Solid Films. 579:131-135
The properties of thin Si and SiGe layers grown on SiO2 by chemical vapor deposition (CVD) were studied using transmission electron and atomic force microscopies, and Raman and photoluminescence (PL) spectroscopies. The layers with a composition of S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ba7c7c4a6f7ffecc214f89d2b8e23d5
https://doi.org/10.1016/j.tsf.2015.02.076
https://doi.org/10.1016/j.tsf.2015.02.076
Publikováno v:
Semiconductors. 47:264-268
The dislocation networks in structures with hydrophilically bonded Si (001) wafers are investigated by transmission electron microscopy. Networks with differing geometry and type of dominant dislocations are observed. One type of networks, which is t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f95e2ee3ba54782b289538d021015dc
https://doi.org/10.1134/s106378261302022x
https://doi.org/10.1134/s106378261302022x
Autor:
Elena I. Shek, Lyudmila I. Khirunenko, David I. Tetel`baum, V.I. Vdovin, A. E. Kalyadin, Nikolai A. Sobolev
Publikováno v:
Solid State Phenomena. :341-346
Luminescent and structural properties of silicon layers with dislocation-related luminescence have been studied. Silicon ions (100 keV) were implanted into n-FZ-Si wafers at a dose exceeding the amorphization threshold by two orders of magnitude. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e3e8b1c62f8a5e04f7d09a2e3453dab
https://doi.org/10.4028/www.scientific.net/ssp.178-179.341
https://doi.org/10.4028/www.scientific.net/ssp.178-179.341