Zobrazeno 1 - 10
of 60
pro vyhledávání: '"V.I. Tolstikhin"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
V.I. Tolstikhin
Publikováno v:
Microelectronic Engineering. 19:903-906
The novel high-speed integrated SEED-like bistable element with the light controlled shape of the power transfer characteristics is proposed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d07fb34a6e241158179a971db3b54def
https://doi.org/10.1016/0167-9317(92)90569-d
https://doi.org/10.1016/0167-9317(92)90569-d
Autor:
V.I. Tolstikhin
Publikováno v:
2007 Asia Optical Fiber Communication and Optoelectronics Conference.
Integrated photonics technologies are reviewed in application to access network transceivers. Low manufacturing cost and high volume scalability, achievable through monolithic integration by means of semiconductor wafer fabrication techniques, identi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2649fe55930febf96907b59759aec92
https://doi.org/10.1109/aoe.2007.4410749
https://doi.org/10.1109/aoe.2007.4410749
Autor:
Pcm Christianen, V.I. Tolstikhin, Theo Rasing, A.P. de Boer, J.C. Maan, H.M. de Vrieze, T.G. van de Roer
Publikováno v:
Applied Physics Letters, 72, 2936-2938
Applied Physics Letters, 72, 23, pp. 2936-2938
Applied Physics Letters, 72(23), 2936-2938. American Institute of Physics
Applied Physics Letters, 72, 23, pp. 2936-2938
Applied Physics Letters, 72(23), 2936-2938. American Institute of Physics
It is shown that measurements of the effect of optical injection with an external laser on the spectral response of a semiconductor optical amplifier can probe intrinsic properties of a working device. The data demonstrate that under saturated gain c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b19ea5e2319d205161d0f6da7351fb7
https://doi.org/10.1063/1.121499
https://doi.org/10.1063/1.121499
Autor:
V.I. Tolstikhin, T.G. van de Roer, J.J.M. Kwaspen, Chennupati Jagadish, G.A. Acket, H.H. Tan, E. Smalbrugge, R.C.P. Hoskens
Publikováno v:
Commad '04 conference, Brisbane, Australia, 397-400
STARTPAGE=397;ENDPAGE=400;TITLE=Commad '04 conference, Brisbane, Australia
STARTPAGE=397;ENDPAGE=400;TITLE=Commad '04 conference, Brisbane, Australia
The novel hot electron injection laser (HEL), a three-terminal vertically integrated transistor-laser structure, is designed to investigate and possibly utilize the effects of carrier-heating on the optical gain and wavelength chirp. Simulations show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3fe1c050404d667104eb0017a31e862
https://doi.org/10.1109/commad.2004.1577573
https://doi.org/10.1109/commad.2004.1577573
Publikováno v:
Proceedings of the 13th IEEE Annual Meeting on Lasers and Electro-Optics Society (LEOS 2000) 13-16 november 2000, Rio Grande, Puerto Rico, 444-445
STARTPAGE=444;ENDPAGE=445;TITLE=Proceedings of the 13th IEEE Annual Meeting on Lasers and Electro-Optics Society (LEOS 2000) 13-16 november 2000, Rio Grande, Puerto Rico
STARTPAGE=444;ENDPAGE=445;TITLE=Proceedings of the 13th IEEE Annual Meeting on Lasers and Electro-Optics Society (LEOS 2000) 13-16 november 2000, Rio Grande, Puerto Rico
The first hot electron injection laser (HEL), a vertically integrated transistor-laser structure, is designed to investigate carrier-heating effects on the optical gain and wavelength chirp. Simulations show the potential of carrier-heating assisted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c588b2bb8a3d97f08d6540bc8434c44
https://doi.org/10.1109/LEOS.2000.893905
https://doi.org/10.1109/LEOS.2000.893905
Publikováno v:
Conference on Lasers and Electro-Optics Europe.
The modulation of laser diodes emitting at 1.55 μm has become very important for high bit rate lightwave communications. Both carrier density and carrier temperature determine the optical performance of the diode. Since thermalization of hot carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54999e0ab79e9aa8a5504e098e31b1a9
https://doi.org/10.1364/cleo_europe.1996.cfb6
https://doi.org/10.1364/cleo_europe.1996.cfb6
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
IEEE Photonics Technology Letters; Jun2003, Vol. 15 Issue 6, p843-845, 3p