Zobrazeno 1 - 10
of 381
pro vyhledávání: '"V.G. Litovchenko"'
Publikováno v:
Opto-Electronics Review. 25:251-262
The electron field and photo-field emission from GaN nanostructures has been analyzed in this review. In order to explain the obtained experimental results, a model was proposed taking into account the change in carrier concentration distribution in
Autor:
V.G. Litovchenko, M. V. Strikha, H.L. Hartnagel, Oktay Yilmazoglu, A. A. Evtukh, A. I. Kurchak
Publikováno v:
Ukrainian Journal of Physics; Vol. 62 No. 6 (2017); 526
Український фізичний журнал; Том 62 № 6 (2017); 526
Український фізичний журнал; Том 62 № 6 (2017); 526
The influence of diamond-like carbon (DLC) films deposited under various conditions on the electron field emission (EFE) of silicon (Si) tips has been investigated. During the nitrogen-doped DLC film deposition, the nitrogen content in a gas mixture
Autor:
V.G. Litovchenko
Publikováno v:
Ukrainian Journal of Physics. 62:80-95
Autor:
V.G. Litovchenko
Publikováno v:
Ukrainian Journal of Physics; Vol. 60 No. 10 (2015); 1036
Український фізичний журнал; Том 60 № 10 (2015); 1036
Український фізичний журнал; Том 60 № 10 (2015); 1036
Fundamental recombination parameters of a photosensitive solar silicon material have been studied using the surface photovoltage spectroscopy. The method proposed is analyzed on the basis of photosensitive silicon structures of four types: industrial
Autor:
V.G. Litovchenko
Publikováno v:
Ukrainian Journal of Physics; Vol. 61 No. 2 (2016); 181
Український фізичний журнал; Том 61 № 2 (2016); 181
Український фізичний журнал; Том 61 № 2 (2016); 181
Autor:
V.G. Litovchenko
Publikováno v:
Ukrainian Journal of Physics; Vol. 59 No. 8 (2014); 826
Український фізичний журнал; Том 59 № 8 (2014); 826
Український фізичний журнал; Том 59 № 8 (2014); 826
Autor:
F. F. Komarov, B.M. Romanyuk, V.V. Chernenko, V.G. Litovchenko, V.G. Popov, V.M. Naseka, S.I. Kyrylova, A.V. Sachenko, V.P. Kostylev, T.V. Slusar
Publikováno v:
Ukrainian Journal of Physics; Vol. 58 No. 2 (2013); 142
Український фізичний журнал; Том 58 № 2 (2013); 142
Український фізичний журнал; Том 58 № 2 (2013); 142
Spectral dependences of the small-signal surface photovoltage, Vf (л), with a region of short- wave recession have been studied experimentally and theoretically. The dependences Vf (л) are shown to enable important information concerning a modifica
Publikováno v:
Ukrainian Journal of Physics; Vol. 60 No. 6 (2015); 511
Український фізичний журнал; Том 60 № 6 (2015); 511
Український фізичний журнал; Том 60 № 6 (2015); 511
Mechanisms of the spatial redistribution of components in a solid target at its ion bombardment have been analyzed theoretically. The influence of the ion mixing, crater shape, and surface roughness on the results of mass spectrometric measurements i
Publikováno v:
Ukrainian Journal of Physics; Vol. 60 No. 1 (2015); 64
Український фізичний журнал; Том 60 № 1 (2015); 64
Український фізичний журнал; Том 60 № 1 (2015); 64
The results of researches on the interaction of accelerated ions with a solid at the in situ ultra-sonic treatment are reported. A proposed combined method of acoustically stimulated ion beam doping of solid-state targets allows one to efficiently co
Autor:
B. Romanyuk, O. Oberemok, Viktor Melnik, V.G. Litovchenko, V. Popov, V. P. Kladko, Jan Vanhellemont
Publikováno v:
physica status solidi c. 11:1634-1639
Low energy As or Sb ion implantation followed by furnace annealing was used to create ultra shallow junctions. It was found that a significant amount of oxygen was redistributed from the Si bulk to the As implanted layer leading even to an increase o