Zobrazeno 1 - 10
of 60
pro vyhledávání: '"V.F. Dryakhlushin"'
Autor:
Yu K Verevkin, V N Petryakov, V. N. Burenina, V.F. Dryakhlushin, A. V. Kirsanov, N. V. Vostokov, A. Yu. Klimov, Vladimir I. Bredikhin
Publikováno v:
Technical Physics. 49:1191-1195
The sensitivity and resolution of a photoresist composed of a two-layer (polymer-metallic indium) film are measured. 2D masks used to create nanodimensional metallic and insulating islands on a silicon substrate are prepared by direct laser action. C
Autor:
V.F. Dryakhlushin
Publikováno v:
SPIE Proceedings.
The overview of the last investigations in the areas of scanning near-field optical microscopy (SNOM), surface diagnostics and surface modification with nanometre resolution using SNOM are observed. The operation principles of different types of SNOM
Autor:
V.F. Dryakhlushin, V.P. Veiko
Publikováno v:
CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005..
The probe is a key element of a SNOM. The probe size determines the microscope resolution, the optical power emerging from the probe determines applications of SNOM for local surface modification and high-resolution diagnostics. Two methods of fabric
Autor:
V.F. Dryakhlushin
Publikováno v:
2005 15th International Crimean Conference Microwave & Telecommunication Technology.
The method of scanning near-field optical microscope (SNOM) probe fabrication with high transmission coefficients on the base of tapered single-mode optical fiber are studied. The various methods of improvement of resolution of SNOM and application f
Autor:
K.P. Gaikovich, V.F. Dryakhlushin
Publikováno v:
Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003..
Results of the study a thin near-field structure of the semiconductor laser emission using nearfield optical microscopy (SNOM) are presented. Significant enhancement of resolution is achieved by deconvolution of measured 2-D images using Tikhonov's m
Autor:
K.P. Gaikovich, V.F. Dryakhlushin
Publikováno v:
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843).
The aim of this work is investigation of the spatial distribution of different modes of two-color semiconductor IR laser emission. The attractive property of this laser is the possibility of generation of terahertz oscillation with the help of mixing
Autor:
V.F. Dryakhlushin, K.P. Gaikovich
Publikováno v:
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843).
The development of micro- and nanoelectronics needs chemical diagnostics of structures with nanometre resolution. The progress in scanning probe microscopy, in particular, in the method of scanning Auger microscopy (SAM) (S.T. Purcell et al, Nanotech
Autor:
A.V. Zhilin, A.N. Reznik, N.V.K.P. Gaikovich, V.F. Dryakhlushin, Vladimir L. Vaks, Yu. N. Nozdrin
Publikováno v:
12th International Conference Microwave and Telecommunication Technology.
Significant enhancement of resolution in the scanning near-field optical microscopy (SNOM) and in the microwave subsurface imaging (MSI) is achieved by deconvolution of measured 2-D images using Tikhonov's method. This method makes it possible to obt
Publikováno v:
12th International Conference Microwave and Telecommunication Technology.
A contact scanning near-field optical lithography method has been developed to enable fabrication of different nanoelements; (metal, dielectric, etched in surface or its combinations) on the various surfaces (metal, dielectric, light- and heavy doped
Publikováno v:
Proceedings of 2002 4th International Conference on Transparent Optical Networks (IEEE Cat. No.02EX551).
Probes for a scanning near-field optical microscope on the base a single-mode adiabatically tapered optical fiber have been fabricated by the chemical etching only. The transmission coefficient of light in this probes is 2-3 order magnitude higher th