Zobrazeno 1 - 10
of 99
pro vyhledávání: '"V.E. Tezlevan"'
Autor:
Kwong-Kau Tiong, J.D. Wu, Ying-Sheng Huang, Ernest Arushanov, S. Levcenco, V.E. Tezlevan, Dumitru Dumcenco, Yi-Ping Wang
Publikováno v:
Optical Materials. 34:1072-1076
Photoluminescence (PL) and Raman scattering were used to characterize the single crystals of Cu2ZnSiQ4 (Q = S, Se). Thin-blade single crystals of Cu2ZnSiQ4 were grown by chemical vapor transport technique using iodine as a transport agent. PL spectru
Publikováno v:
Optics Communications. 282:4562-4566
Photoluminescence and resonance Raman scattering spectra of CuGaS2 crystals are investigated at low temperature (10 K) under the excitation with the radiation from a spectral interval obtained by passing the radiation of an incandescent or xenon lamp
Publikováno v:
Optical Materials. 31:970-975
In this work it is researched the Raman scattering spectra of CuGaхIn1−xS2 solid compounds for x = 1.0,0.9 and 0.8 at 10–60 K. LO-phonons, 2LO-phonons etc can be observed while going far from the excitation energy (6 phonons of the E symmetry an
Publikováno v:
Optics Communications. 280:387-392
In CuGaS 2 crystals absorption and luminescence spectra at the temperature 9 K at excitation by different wavelengths of Ar laser are investigated. A series of lines available in luminescence and absorption spectra is found. Another series of lines i
Publikováno v:
Optical Materials. 30:451-456
In this work the reflectivity spectra of the CuGaS 2 crystals have been investigated in the EIIc polarization and the absorption spectra were studied in the E ⊥ c polarization at the 10 K. The parameters of the excitons and the band gaps have been
Publikováno v:
Optics Communications. 272:124-130
The nonmodulated and wavelength-modulated reflection spectra of CuGaS2 crystals for the polarization Е||c of 10 K are studied. The states n = 1, 2 and 3 of the excitons Γ4 (A-excitons) and n = 1, n = 2 of B- and C-excitons are found. The nonmodulat
Publikováno v:
Solid State Communications. 138:250-254
The electronic structure and chemical bonding in HgGa2S4 crystals grown by vapor transport method are investigated with X-ray photoemission spectroscopy. The valence band of HgGa2S4 is found to be formed by splitted S 3p and Hg 6s states at binding e
Publikováno v:
Journal of Physics and Chemistry of Solids. 66:1974-1977
Exciton spectra are studied in CuGa X In 1− X S 2 solid solutions by means of photoreflectivity and wavelength modulation spectroscopy at liquid nitrogen temperature. The exciton parameters, dielectric constants, and free carrier effective masses a
Publikováno v:
Physica B: Condensed Matter. 365:43-46
The value of longitudinal–transverse splitting ω LT equal to 2.5–2.8 meV and the translation mass M = 2.5 m 0 were determined for the A exciton as a result of investigation of the reflectivity and luminescence spectra of CuGaSe2 crystals. The em
The interference of additional waves of forbidden polaritons excited by allowed polaritons in CuGaS2
Publikováno v:
Journal of Physics and Chemistry of Solids. 64:1967-1971
Additional waves of exciton polaritons are studied in thin (1.5–1.8 μm) CuGaS 2 crystals at 9 K. The reflectivity spectra show a fine structure related to the interference of Fabry–Perot and additional waves which is a consequence of the polarit