Zobrazeno 1 - 10 of 117 pro vyhledávání: '"V.E. Stepanov"'
2
On the Indicators of the Radioecological Situation at the Mid-Botuobin Oil and Gas Condensate Field with Underground Nuclear Explosions
Autor: V.D. Yakovleva, E.V. Sleptsova, V.E. Stepanov
Publikováno v: Ecology and Industry of Russia. 24:56-61
The results of expeditionary and laboratory studies of the radiation situation of 2001–2002 and dosimetry measurements of 2017 are presented. there are small radioactive spots. The radionuclide composition in the soil-vegetation cover of the impact
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::feba815c1449fefc84a24ab09e4201ee
https://doi.org/10.18412/1816-0395-2020-1-56-61
Zobrazit plný text záznamu
5
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
6
Particle detector based on GaAs. Radiation hardness and spatial resolution
Autor: V.E. Stepanov, S.S. Khludkov, A.V. Chuntonov, A.A Koretski, V.B. Chmill, A. P. Vorobiev, Kevin M. Smith, O. P. Tolbanov, A.I. Potapov, L.S Okaevitch, A.V. Smol
Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 409:247-250
Some GaAs properties are presented in comparison with Si. Tomsk technology has proposed non-traditional way of a sensitive layer creation. As a result the radiation hardness of these detectors is up to 10 15 n / cm 2 at a neutron fluence and up to 2
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0f8a4c4a1ada91930496883c40655dff
https://doi.org/10.1016/s0168-9002(97)01272-2
Zobrazit plný text záznamu
7
Proton-induced displacement damage in GaAs and radiation-hardness of semiconductor detectors for high energy physics
Autor: S.S. Khludkov, V.E. Stepanov, O. P. Tolbanov
Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 395:60-64
A model of the radiation hardness of semiconductor detector materials is developed in terms of local charge neutrality (LCN). The non-ionizing energy deposition in GaAs has been calculated for protons with energies ranging from 1 to 25 GeV. Deep cent
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d7b1503af12ffe8d6c9988004cd1d214
https://doi.org/10.1016/s0168-9002(97)00625-6
Zobrazit plný text záznamu
8
Radiation hardness of semiconductor detectors for high-energy physics
Autor: O P Tolbanov, V.E. Stepanov, S.S. Khludkov
Publikováno v: Journal of Physics D: Applied Physics. 29:1559-1563
The concept of radiation hardness of semiconductor materials in terms of local charge neutrality is proposed. Deep centres are invoked to play the basic role in the attainment of radiation hardness by high-resistivity semiconductor charged particle d
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::97071f43fd5a36d4aeb291fab657cc34
https://doi.org/10.1088/0022-3727/29/6/022
Zobrazit plný text záznamu
9
Local neutrality conception: Fermi level pinning in defective semiconductors
Autor: S.N Grinyaev, V.N Brudnyi, V.E Stepanov
Publikováno v: Physica B: Condensed Matter. 212:429-435
The local electroneutrality manifestation in defective bulk semiconductors - electron (hole) chemical potential (Fermi-level) pinning near the local neutrality level (LNL) - is researched experimentally in heavy irradiated crystals. A novel equation
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f4bc58ca23b79aab158cc9aaef773350
https://doi.org/10.1016/0921-4526(95)00376-k
Zobrazit plný text záznamu
10
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje