Zobrazeno 1 - 10
of 40
pro vyhledávání: '"V.B. Zalesski"'
Publikováno v:
Optical Materials. 88:718-722
The structural and optical properties of ZnO:Eu thin films deposited on silicon and glass substrates by the magnetron sputtering method have been studied by scanning electron microscopy, energy dispersive X-ray analysis, Auger electron spectroscopy,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bd528639b4009a959b853810f1aa2ce
https://doi.org/10.1016/j.optmat.2018.12.046
https://doi.org/10.1016/j.optmat.2018.12.046
Revealing two components of oxidant flux for thermal oxidation of silicon contrary to several models
Publikováno v:
Journal of Materials Science. 52:437-445
Thermal oxidation of silicon is usually described by the Deal–Grove model with its linear-parabolic relationship between oxide thickness and time deduced from Evans’ stationary basic approach. In order to improve the relationship, other models ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48bf275c99c8df12d6f88e5223d4a3aa
https://doi.org/10.1007/s10853-016-0343-4
https://doi.org/10.1007/s10853-016-0343-4
Autor:
V. F. Gremenok, M. V. Yakushev, A. V. Karotki, Robert W. Martin, A. V. Mudryi, V.B. Zalesski, F. Luckert
Publikováno v:
Journal of Applied Spectroscopy. 77:371-377
The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::728880bdd6884a6735e5db3e11f25fd1
https://doi.org/10.1007/s10812-010-9341-5
https://doi.org/10.1007/s10812-010-9341-5
Autor:
Valentine Syakersky, Ryhor Chyhir, V.B. Zalesski, Victor Emelyanov, V.F. Gremenok, Oleg Ermakov, Alexander A. Khodin
Publikováno v:
physica status solidi c. 6:1237-1240
ZnO/n-CdS/p-Cu(In,Ga)Se2 thin film solar cells with graded band gap absorber layer have been modelled. The cells are designed to be fabricated on flexible substrates, so, additional requirements and restrictions to metal contacts and interlayer mecha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccc424a040952f331f76b5190533b7f1
https://doi.org/10.1002/pssc.200881135
https://doi.org/10.1002/pssc.200881135
Publikováno v:
physica status solidi c. 6:1278-1281
Cu(In1–xGax)(S1–ySey)2 (CIGSS) thin films were prepared by the simultaneous selenizarion/sulfurization of Cu-In-Ga metallic alloys. Full characterizations have been carried out using XRD, SEM, EDX, AES and Raman scattering measurements. Photosens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bae42147c3455aa1c3d04960a88d922
https://doi.org/10.1002/pssc.200881148
https://doi.org/10.1002/pssc.200881148
Publikováno v:
physica status solidi c. 6:1269-1272
The technology of heat treatment of initial Cu-In-Ga layers in an inert N2 atmosphere in the presence of Se and S vapors was used in self-organized growth of homogeneous films of Cu(In,Ga)(S,Se)2 alloys onto which the CdS or In2S3 films were deposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeed5e0f52553b9bbccc30328fe7d804
https://doi.org/10.1002/pssc.200881173
https://doi.org/10.1002/pssc.200881173
Autor:
T. R. Leonova, V.F. Gremenok, A. V. Kravchenko, V.B. Zalesski, Yu. V. Rud, Mikhail S. Tivanov, V. Yu. Rud, E. P. Zaretskaya
Publikováno v:
Semiconductors. 41:973-978
The method of heat treatment of metallic Cu-In-Ga layers in the N2 inert atmosphere in the presence of selenium and sulfur vapors was used to grow homogeneous films of Cu(In,Ga)(S,Se)2 alloys onto which the CdS or In2S3 films were deposited and, on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::115053d10b61ed64f13f10c15f78dfce
https://doi.org/10.1134/s1063782607080210
https://doi.org/10.1134/s1063782607080210
Publikováno v:
Thin Solid Films. 515:5848-5851
Single-phase Cu(In,Ga)(S,Se) 2 (CIGSS) thin films have been prepared using a two-step process consisting of annealing of Cu–In–Ga precursors in S/Se ambient. Full characterizations have been carried out using XRD, SEM, EDS, Raman spectroscopy and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::889d126f5b471360ea72e1e93994612d
https://doi.org/10.1016/j.tsf.2006.12.055
https://doi.org/10.1016/j.tsf.2006.12.055
Autor:
V. F. Gremenok, Klaus Bente, Robert W. Martin, V.B. Zalesski, E. P. Zaretskaya, W. Schmitz, Hans Joachim Möller
Publikováno v:
Solar Energy Materials and Solar Cells. 89:129-137
The aim of this work is to study the dependence of the structural properties of Cu(In,Ga)Se-2 polycrystalline thin films prepared by a two-step selenization of co-evaporated metallic precursors in Se-containing environment under N-2 gas flow. Charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74b2f642d0e1e7cfc01cb63a463dc527
https://doi.org/10.1016/j.solmat.2004.11.014
https://doi.org/10.1016/j.solmat.2004.11.014
Autor:
V.F. Gremenok, W. Schmitz, Hans Joachim Möller, V.M. Siarheyeva, E. P. Zaretskaya, V.B. Zalesski, Klaus Bente
Publikováno v:
Thin Solid Films. 487:193-198
We investigated the preparation of (CuInSe 2 ) 1-X (2ZnSe) X (CIZSe) thin films with different composition of zinc (0.0≤X≤0.42) using a two-stage technological process-evaporation of ZnSe, Cu and In components and subsequent selenization in a qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::384f8ce20ef0b08a66fceb047619e52b
https://doi.org/10.1016/j.tsf.2005.01.063
https://doi.org/10.1016/j.tsf.2005.01.063