Zobrazeno 1 - 10
of 86
pro vyhledávání: '"V.A. Romaka"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 25, Iss 2, Pp 391-398 (2024)
The structural, electrokinetic, and energetic properties of the TiСо1-xCrxSb semiconductor obtained by doping TiCoSb with Cr atoms introduced into the structure by substituting Co atoms in the crystallographic position 4c were studied. It was shown
Externí odkaz:
https://doaj.org/article/577b7fd55f9b4ab3833d850375ecda84
Publikováno v:
Фізика і хімія твердого тіла, Vol 25, Iss 1, Pp 157-163 (2024)
The structural, electrokinetic, and energetic properties of the Ti1-xAlxNiSn semiconductor solid solution, obtained by introducing of Al atoms into the structure of the TiNiSn half-Heusler phase by substituting Ti atoms in the crystallographic positi
Externí odkaz:
https://doaj.org/article/40a95697a4994f96955a07ee9872b741
Publikováno v:
Фізика і хімія твердого тіла, Vol 24, Iss 3, Pp 503-508 (2023)
Modeling of the thermodynamic, structural, energetic and magnetic properties of the semiconductor solid solution Lu1-xVxNiSb was carried out under the condition of the presence of a magnetic moment on the V atoms and the occurrence of spontaneous mag
Externí odkaz:
https://doaj.org/article/302f21e7abc04443bfb073cc6e275c1d
Autor:
Yu. Stadnyk, V.A. Romaka, L. Romaka, P. Demchenko, A. Horyn, O. Poplavskyi, V. Pashkevych, P. Haraniuk
Publikováno v:
Фізика і хімія твердого тіла, Vol 24, Iss 1, Pp 84-91 (2023)
The structural, electrokinetic, energetic, and magnetic properties of the new semiconductive solid solution Lu1-xVxNiSb, х=0–0.10, were studied. It was shown that V atoms could simultaneously occupy different crystallographic positions in differen
Externí odkaz:
https://doaj.org/article/78f1302d4ebe46699d755d79d01f1143
Publikováno v:
Фізика і хімія твердого тіла, Vol 23, Iss 3, Pp 497-504 (2022)
The KKR (AkaiKKR software package) and FLAPW (Elk software package) methods were used to model the structural, thermodynamic, energetic, and electrokinetic characteristics of the Lu1-xZrxNiSb semiconductor solid solution. It is shown that defects of
Externí odkaz:
https://doaj.org/article/23799a09b54143f893bece0f07a0ac0f
Publikováno v:
Фізика і хімія твердого тіла, Vol 23, Iss 2, Pp 235-241 (2022)
The effect of doping of half-Heusler phase p-LuNiSb (MgAgAs structure type) by Zr atoms on the structural, kinetic, energetic and magnetic characteristics of the semiconductor solid solution Lu1-xZrxNiSb was studied in the ranges: T = 80–400 K, x =
Externí odkaz:
https://doaj.org/article/09b474a703334269b405fcd0293155d0
Autor:
Yu. Stadnyk, V.A. Romaka, A. Horyn, V.V. Romaka, L. Romaka, P. Klyzub, V. Pashkevych, P. Gorpenyuk
Publikováno v:
Фізика і хімія твердого тіла, Vol 22, Iss 3, Pp 509-515 (2021)
The energy expediency of the existence of Er1-xScxNiSb substitutional solid solution up to the concentration x≈0.10 was established by modeling the variation of free energy ΔG(x) values (Helmholtz potential). At higher Sc concentrations, x> 0.10,
Externí odkaz:
https://doaj.org/article/0423ef0b4ff941b8874d71ab7e1d8bf2
Publikováno v:
Фізика і хімія твердого тіла, Vol 22, Iss 1, Pp 146-152 (2021)
Samples of Er1-xScxNiSb (x = 0–0.10) solid solution were synthesized by an arc-melting and the effect of doping by Sc atoms on the electrokinetic and energetic characteristics of the half-Heusler ErNiSb phase was investigated. It was established th
Externí odkaz:
https://doaj.org/article/a446299c4e4e4b3f92faa3ba509b3002
Publikováno v:
Фізика і хімія твердого тіла, Vol 21, Iss 4, Pp 689-694 (2020)
Peculiarities of the structural, electrokinetic, energetic, and magnetic characteristics of Er1-xZrxNiSb semiconductive solid solution, х=0–0.10, were studied. It was suggested that when Zr (4d25s2) atoms were introduced into the structure of the
Externí odkaz:
https://doaj.org/article/d9f9aba856124574b498eae50b82684f
Autor:
L. P. Romaka, V.V. Romaka, P. Gorpenyuk, V. Pashkevych, Yu. Stadnyk, V.A. Romaka, P. Klyzub, Andriy Horyn
Publikováno v:
Фізика і хімія твердого тіла, Vol 22, Iss 3, Pp 509-515 (2021)
The energy expediency of the existence of Er1-xScxNiSb substitutional solid solution up to the concentration x≈0.10 was established by modeling the variation of free energy ΔG(x) values (Helmholtz potential). At higher Sc concentrations, x> 0.10,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d43bf461a374ee83d738f50a1026b570
https://doi.org/10.15330/pcss.22.3.509-515
https://doi.org/10.15330/pcss.22.3.509-515