Zobrazeno 1 - 10
of 28
pro vyhledávání: '"V.A. Eltekov"'
Publikováno v:
Scopus-Elsevier
A study of copper crystal sputtering by 10–2500 eV Ar ions was performed by molecular dynamic computer simulation. Good agreement with experiment was obtained in spatial and energy distributions of sputtered atoms and in energy dependence of sputte
Autor:
S. S. Elovikov, V.A. Eltekov, N. N. Negrebetskaya, V. E. Yurasova, A. A. Promokhov, John Colligon
Publikováno v:
Radiation Effects and Defects in Solids. 133:107-120
The sputtering of hexagonal and rhombohedral forms of boron nitride is studied by computer simulation and experimentally. The sputtering yield of the rhombohedral crystal is found to be up to twice as large as that of the hexagonal one in the energy
Autor:
I.V. Opimach, J.V. Sushkova, N. N. Negrebetskaya, V. E. Yurasova, O.I. Buzhinskij, I.I. Shkarban, S.S. Elovikov, V.A. Eltekov
Publikováno v:
Journal of Nuclear Materials. :1335-1338
The sputtering of boron nitride crystals of hexagonal (h-BN) and rhombohedral (r-BN) modifications was studied experimentally and by computer simulation. It was shown that sputtering yields are greater and change more rapidly with the energy, E , of
Autor:
N.N. Negrebetskaya, V.A. Eltekov
A great variety of radiation effects (the number of point defects, sputtering ratio, mixing, segregation, etc) depends critically on the value of energy deposition. In this work the energy deposition is simulated on the basis of a computer model of p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8383d027ea51d8b7e687dd53158aaff6
https://doi.org/10.1016/b978-0-444-82334-2.50126-x
https://doi.org/10.1016/b978-0-444-82334-2.50126-x
Publikováno v:
ResearcherID
A molecular dynamics computer simulation model is used to calculate transmission of ions through thin α - and β -Co single-crystal foils and sputtering of α - and β -Co single crystals under 0.2–10 keV Ar + ion bombardment. Normal ion incidence
Publikováno v:
Radiation Effects. 83:39-67
Some simplified models are used to computer-calculate the parameters of Cu single crystal sputtering by 1 keV Ar ions. Each of the models is a confined structure of a perfect single crystal with various numbers of atoms (from 2 to 34). The sputtering
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 13:443-448
The method of computer simulation is used to study the 200 eV Ar+ ion interactions with (001) Ni single crystal face in ferromagnetic and paramagnetic states. The integral yields and the spatial and energy distributions of the sputtered and transmitt
Publikováno v:
Journal of Nuclear Energy. Parts A/B. Reactor Science and Technology. 18:401-406
The Monte Carlo method has been used to determine the fraction of γ-ray energy absorbed by the components of complex heterogeneous systems consisting of a cylindrical water-equivalent body which is being irradiated, cylindrical γ-ray sources arrang
Publikováno v:
Soviet Atomic Energy. 19:1097-1100
A method is offered for measuring gamma absorption from a point source by large objects. Cases in which the point source is placed at the center of a sphere and on the axis of a cylinder are analyzed. In the latter case, absorption can be recorded fr
Publikováno v:
Soviet Atomic Energy. 13:1199-1202
The distributions of absorbed ψ -radiation energy between the sources forming an infinite lattice and the ambient medium are compared. The distributions were calculated by the Monte-Carlo method in a Strela electronic computer and by an age approxim