Zobrazeno 1 - 10
of 25
pro vyhledávání: '"V. Zagadskij"'
Publikováno v:
Technical Physics Letters. 39:945-948
The possibility of increasing the efficiency of a silicon photocell by forming a porous-silicon structure in its bulk has been proposed and studied. Photocells produced from p-type single-crystal silicon plates by the diffusion method were investigat
Publikováno v:
Acta Physica Polonica A. 122:1121-1124
This work presents porous silicon technology, adapted to improve the characteristics of monocrystalline silicon solar cell. This is achieved by taking advantage of properties provided by porous silicon technology in production of diverse structures i
Publikováno v:
Mokslas – Lietuvos ateitis / Science – Future of Lithuania; Vol 3 No 6 (2011): Physics and physical computing / Fizika ir fizinė kompiuterija; 91-94
Mokslas: Lietuvos Ateitis, Vol 3, Iss 6 (2012)
Mokslas: Lietuvos Ateitis, Vol 3, Iss 6 (2012)
The paper examines the parameters of crystalline silicon solar cells such as fill factor, maximal output power and series resistance forming a porous silicon layer. The obtained results show that introducing the layer into the structure of a solar ce
Publikováno v:
Medžiagotyra, Vol 18, Iss 3, Pp 220-222 (2012)
Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adap
Autor:
V. Zagadskij, J. Stupakova, Edmundas Širmulis, Jonas Gradauskas, N. Samuolienė, E. Šatkovskis
Publikováno v:
Acta Physica Polonica A. 119:137-139
Photoresponse of silicon samples containing porous structures have been studied under the action of CO2 laser radiation. The signal shape and its behavior under the applied bias voltage revealed the existence of two heterojunctions on the border of p
Autor:
Renata Boris, Valentin Antonovič, J. Stupakova, J. Keriene, V. Zagadskij, R. Mitkevičius, E. Shatkovskis, A. Baradinskaite, A. Jukna
Publikováno v:
SPIE Proceedings.
The electrochemical etching of porous silicon offers many diverse opportunities for production of complex porous silicon structures located not only on the surface but also in a bulk of the silicon devices. A specific technological regime, the photo-
Autor:
Jonas Gradauskas, E. Shatkovskis, Algirdas Sužiedėlis, V. Zagadskij, Steponas Ašmontas, J. Stupakova
Publikováno v:
Scopus-Elsevier
Metal – porous silicon structures started to be analyzed right after the unique features of porous silicon have been found. The basis for this were researches aimed at getting efficient light radiating diodes, photodetectors, various chemical, bioc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d79a36b80602b408e8339a4dbbd8a0ba
http://www.scopus.com/inward/record.url?eid=2-s2.0-33846470524&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-33846470524&partnerID=MN8TOARS
Autor:
Šatkovskis, E.1 eugenijus.satkovskis@vgtu.lt, Mitkevičius, R.1, Zagadskij, V.1, Stupakova, I.1
Publikováno v:
Technical Physics Letters. Nov2013, Vol. 39 Issue 11, p945-948. 4p.
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