Zobrazeno 1 - 10
of 72
pro vyhledávání: '"V. Yu. Panevin"'
Autor:
M. Ya. Vinnichenko, I. S. Makhov, N. Yu. Kharin, S. V. Graf, V. Yu. Panevin, I. V. Sedova, S. V. Sorokin, D. A. Firsov
Publikováno v:
Semiconductors. 55:710-716
Autor:
A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, N. Yu. Kharin, V. Yu. Panevin, S. O. Slipchenko, A. V. Lyutetskii, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, N. A. Pikhtin, A. Yu. Egorov
Publikováno v:
Semiconductors. 55:591-594
Publikováno v:
Journal of Luminescence. 210:352-357
The low-temperature terahertz and near-infrared photoluminescence from the near-infrared laser nanostructure with GaAs/AlGaAs quantum wells doped with shallow donors is studied under intense interband optical excitation. The optical electron transiti
Autor:
D. A. Firsov, M. Ya. Vinnichenko, A. P. Vasil’ev, I S Makhov, A. N. Sofronov, Leonid E. Vorobjev, N. A. Maleev, V. Yu. Panevin
Publikováno v:
Superlattices and Microstructures. 112:79-85
Emission of far- and near-infrared radiations in the n-GaAs/AlGaAs quantum well nanostructures under interband photoexcitation of electron-hole pairs is studied at low lattice temperatures. Optical transitions of nonequilibrium electrons involving do
Autor:
M. D. Moldavskaya, E. E. Zavarin, W. V. Lundin, Vadim A. Shalygin, A. V. Sakharov, Christoffer Kauppinen, Sami Suihkonen, V. Yu. Panevin, V. V. Korotyeyev, M. Ya. Vinnichenko, K. V. Maremyanin, D. A. Firsov, Leonid E. Vorobjev, D. S. Arteev
Publikováno v:
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
Emission of terahertz radiation from a AlGaN/GaN/Al $_{\mathbf {2}} \mathbf {O} _{\mathbf {3\, }}$ heterostructure with a surface metal grating is investigated under conditions of 2D electron heating in a lateral electric field. The studies are perfo
Publikováno v:
Semiconductors. 50:1191-1197
The results of studies of thin composite films of zinc and copper tetraphenylporphyrins with different fractions of fullerene C60 are reported. The photoluminescence spectra are recorded, and the composition and surface morphology are analyzed by mea
Autor:
I.V. Sedova, Leonid E. Vorobjev, V. Yu. Panevin, I S Makhov, D. A. Firsov, S. V. Sorokin, M. Ya. Vinnichenko
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 124:114301
The results of the theoretical and experimental investigations of optical response of the acceptor centers in narrow GaAs/AlGaAs quantum wells in the infrared spectral range are presented. In the theoretical part, we focused on the probabilities of t
Autor:
Dmitrii V. Nechaev, Stefan Ivanov, N. Yu Kharin, V. Yu. Panevin, A D Fedorov, D. A. Firsov, M. Ya. Vinnichenko, V. N. Jmerik
Publikováno v:
Journal of Physics: Conference Series. 1482:012021
Optical absorption of s- and p-polarized light was studied in GaN/AlN quantum wells in the near-infrared spectral range. An absorption peak associated with intersubband electron transitions in quantum wells was observed near a wavelength of 1.55 μm.
Autor:
I S Makhov, V. Yu. Panevin, I. V. Sedova, Leonid E. Vorobjev, N. Yu Kharin, D. A. Firsov, S. V. Sorokin, M. Ya. Vinnichenko
Publikováno v:
Journal of Physics: Conference Series. 1482:012025
Photoconductivity in GaAs/AlGaAs quantum well nanostructures doped with acceptors was studied at low lattice temperatures in the infrared and terahertz spectral ranges. The photocurrent spectra revealed features that can be attributed to the hole tra
Autor:
I S Makhov, Leonid E. Vorobjev, N. A. Maleev, M. Ya. Virmichenko, D. A. Firsov, A. P. Vasil’ev, V. Yu. Panevin
Publikováno v:
2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
The terahertz radiation associated with electron transitions between impurity levels in GaAs/AlGaAs quantum wells is investigated in conditions of optical interband excitation. It has been shown that the near-infrared interband stimulated emission ar