Zobrazeno 1 - 4
of 4
pro vyhledávání: '"V. Yu. Mayakin"'
Autor:
V. V. Gudkov, M. N. Sarychev, V. Yu. Mayakin, I. V. Zhevstovskikh, V. I. Okulov, L. D. Paranchich, M. D. Andriichuk
Publikováno v:
Physics of the Solid State. 57:880-885
The effects of the interaction of ultrasound with donor d electrons of cobalt impurity atoms at low concentrations in mercury selenide crystals have been investigated. The temperature dependences of the electronic contribution to the absorption coeff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de76d72a7ae6b18107f8652971863c8f
https://doi.org/10.1134/s1063783415050352
https://doi.org/10.1134/s1063783415050352
Autor:
M. N. Sarychev, A. M. Monakhov, V. V. Gudkov, G.V. Colibaba, K. A. Baryshnikov, V. Yu. Mayakin, D. D. Nedeoglo, V. T. Surikov, Isaac B. Bersuker, I. V. Zhevstovskikh, N. S. Averkiev
Publikováno v:
physica status solidi (b). 251:1590-1595
We show that the structure, properties, and concentration of vacancies in crystals can be studied by ultrasonic experiments previously employed for impurity centres only. Measurements of the temperature dependence of attenuation and phase velocities
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce18fe463d32cbb889a1654262ab8ae2
https://doi.org/10.1002/pssb.201451092
https://doi.org/10.1002/pssb.201451092
Autor:
M. N. Sarychev, N. S. Averkiev, A. M. Monakhov, I. V. Zhevstovskikh, K. A. Baryshnikov, V. V. Gudkov, V. E. Sedov, Isaac B. Bersuker, V. Yu. Mayakin
Publikováno v:
JETP Letters
The interaction of ultrasound with Cu Ga4As in a GaAs:Cu crystal has been experimentally studied. The temperature dependences of the attenuation of all normal ultrasonic modes propagating in the 〈110〉 direction both in doped copper and in nominal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2db37366167e26dbf31ded5f48615ae
https://doi.org/10.1134/s0021364012160023
https://doi.org/10.1134/s0021364012160023
Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals
Autor:
V. V. Gudkov, M. N. Sarychev, K. A. Baryshnikov, V. E. Sedov, V. T. Surikov, N. S. Averkiev, Isaac B. Bersuker, I. V. Zhevstovskikh, V. Yu. Mayakin, A. M. Monakhov
Publikováno v:
Journal of Applied Physics
Transition-metal-doped semiconductor GaAs crystals are used as model systems for spintronic research, as well as in other applications. To explore the structure and properties of such impurities, we extended the methodology of ultrasonic investigatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17d12d5250587a18df5394e71a9547d5
https://elar.rsvpu.ru/handle/123456789/28135
https://elar.rsvpu.ru/handle/123456789/28135
