Zobrazeno 1 - 2
of 2
pro vyhledávání: '"V. Yu. Erokhov"'
Publikováno v:
Scopus-Elsevier
The mechanism by which an external bias voltage influences the photoelectric properties of Al/tunneling-thin SiO2/p-Si structures with an induced inversion layer is investigated theoretically. A characteristic feature of the structure studied is the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e77c8ce13f8b1ad1e47e9bb6f437862
https://doi.org/10.1134/1.1187032
https://doi.org/10.1134/1.1187032
Publikováno v:
Semiconductors. Oct97, Vol. 31 Issue 10, p1094. 5p.