Zobrazeno 1 - 3
of 3
pro vyhledávání: '"V. Ya. Uritskii"'
Publikováno v:
Russian Microelectronics. 29:417-422
Single-crystal silicon/noncrystalline ultrathin oxide multilayer structures were investigated. The oxide was formed by (100)Si thermal oxidation. An undoped polysilicon layer with an aluminum contact was used as a gate. The distribution of ionized el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df58bda60c7f2f115d1f6d0ead29bf4
https://doi.org/10.1023/a:1026600405092
https://doi.org/10.1023/a:1026600405092
Publikováno v:
Russian Microelectronics. 29:413-416
An approach to radically modifying gate dielectric by laterally gettering electroactive defects (centers) is suggested. Gettering of the ionized centers is accomplished through intentionally creating structure defects in the surface layers of the sid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9715b1e9d47f713b3ed2fb0e4b20bf47
https://doi.org/10.1023/a:1026648321022
https://doi.org/10.1023/a:1026648321022
Autor:
V. Ya. Uritskii, A. P. Krylov
Publikováno v:
Russian Microelectronics. 30:267-268
A new mechanism underlying the effect of the gate oxide geometry on the threshold voltage and other electrical properties of an MOS transistor (MOST) is proposed. This mechanism includes a relationship between the ionized center concentration in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06cffadb3c1e1719d31e14e8efb9546e
https://doi.org/10.1023/a:1011310814524
https://doi.org/10.1023/a:1011310814524