Zobrazeno 1 - 10
of 19
pro vyhledávání: '"V. Ya. Shanygin"'
Publikováno v:
Journal of Communications Technology and Electronics. 64:265-270
A new technology of nanostructuring and modification of the surfaces of silicon crystals of different types of conduction, using self-organized carbon mask coatings and highly anisotropic plasma-chemical etching is proposed. It is shown that the stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c67315177a9dd446ace75fe0eb74429d
https://doi.org/10.1134/s1064226919030203
https://doi.org/10.1134/s1064226919030203
Publikováno v:
Izvestiya of Saratov University. New Series. Series: Physics. 19:68-75
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3a247e2330e4308acd2de71755dfd8b
https://doi.org/10.18500/1817-3020-2019-19-1-68-75
https://doi.org/10.18500/1817-3020-2019-19-1-68-75
Publikováno v:
Russian Microelectronics. 47:104-111
The fabrication method of field electron sources using the atomic structure of silicon crystals and the processes of heterophase vacuum-plasma self-organization of island carbon coatings and highly anisotropic plasma-chemical etching under low adsorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::355515c8436be1e005d5a548a7e01530
https://doi.org/10.1134/s1063739718020099
https://doi.org/10.1134/s1063739718020099
Autor:
R. K. Yafarov, V. Ya. Shanygin
Publikováno v:
Semiconductors. 51:531-535
The study is concerned with the physical and chemical processes and the mechanisms of the effect of plasma preparation of a surface on the systematic features of condensation and surface phase transformations during the formation of Si–C mask domai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7969df3a5e186f4c9051ea369fa41a15
https://doi.org/10.1134/s1063782617040236
https://doi.org/10.1134/s1063782617040236
Autor:
R. K. Yafarov, V. Ya. Shanygin
Publikováno v:
Physics of the Solid State. 58:360-363
This paper presents the results of studies of the dynamics of relaxation modification of the morphological characteristics of atomically clean surfaces of silicon (100) crystals with different types of conductivity after microwave ion physical etchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::681f08d76b38ffde331b010660c6fdea
https://doi.org/10.1134/s1063783416020347
https://doi.org/10.1134/s1063783416020347
Autor:
R. K. Yafarov, V. Ya. Shanygin
Publikováno v:
2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE).
Regularities of changes of morphological and field emission characteristics of superficially structured silicon plates of electronic type of conductivity received with use of etching of natural oxides of silicon in fluorocarbon plasma and ion-physica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbc01e33c3427e36e4e83389abd449f5
https://doi.org/10.1109/apede.2018.8542244
https://doi.org/10.1109/apede.2018.8542244
Publikováno v:
2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE).
Using the high-ionized low-pressure microwave plasma, an original technology for obtaining nanocomposite diamond-graphite film structures with adjustable dimensions and surface density of diamond nanocrystallites has been developed. The regularities
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19590fae3a2d514addc451c63114c8d2
https://doi.org/10.1109/apede.2018.8542348
https://doi.org/10.1109/apede.2018.8542348
Autor:
R. K. Yafarov, V. Ya. Shanygin
Publikováno v:
Semiconductors. 50:54-58
The morphological stability of atomically clean silicon (100) surface after low-energy microwave plasma-chemical etching in various plasma-forming media is studied. It is found that relaxation changes in the surface density and atomic bump heights af
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10cdb8c4d1583f4f05a72de2aee56d98
https://doi.org/10.1134/s106378261601022x
https://doi.org/10.1134/s106378261601022x
Autor:
V. Ya. Shanygin, R. K. Yafarov
Publikováno v:
Technical Physics. 60:848-854
The kinetics of self-organization of nanodomains during the deposition of submonolayer carbon coatings on (100) silicon in the microwave plasma of low-pressure ethanol vapors is studied by atomic force microscopy and scanning electron microscopy. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed22777dbd27e1c9daaecad020d4e1b2
https://doi.org/10.1134/s1063784215060286
https://doi.org/10.1134/s1063784215060286
Autor:
R. K. Yafarov, V. Ya. Shanygin
Publikováno v:
Russian Microelectronics. 44:178-189
Using the Langmuir model of adsorption from the precursor state, the phenomenon of self-organization of nanosized domains with low-pressure ethanol chemical vapor deposition of submonolayer carbonaceous coatings on the atomically-clean surface of sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69359e6b2f53ea759485fc6a4e2ebb9a
https://doi.org/10.1134/s1063739715020080
https://doi.org/10.1134/s1063739715020080