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Publikováno v:
Radiation Effects. 62:1-5
The variation of the fixed oxide charge and the surface state densiy concentration are investigated in MOS structures under γ-irradiation from a 60Co source. SiO2 in the studied samples was obtained in a planar plasma reactor at low temperature (300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8a4f40b01b820bdfef72bc1d6dd1bfe
https://doi.org/10.1080/00337578208235404
https://doi.org/10.1080/00337578208235404
