Zobrazeno 1 - 10
of 15
pro vyhledávání: '"V. X. Ho"'
Publikováno v:
ACS Applied Nano Materials. 4:8539-8545
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3417757c0be7b9a65fd82bf56940934
https://doi.org/10.1021/acsanm.1c01931
https://doi.org/10.1021/acsanm.1c01931
Publikováno v:
Nanoscale. 13:10526-10535
Ultrafast, high sensitive, low cost photodetectors operating at room temperature sensitive from the deep-ultraviolet to mid-infrared region remain a significant challenge in optoelectronics. Achievements in traditional semiconductors using cryogenic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f65e244333daf483414104ac685dbde6
https://doi.org/10.1039/d1nr01572a
https://doi.org/10.1039/d1nr01572a
Autor:
Shannon Lenahan, Leslie Howe, Chang-Yu Hung, V. X. Ho, Wenjun Cai, Jia Chen, Kaiwen Wang, Mitsuhiro Murayama, Wenbo Wang, Nguyen Q. Vinh
Publikováno v:
ACS applied bio materials. 4(11)
The fast degradation rate and poor wear resistance of magnesium (Mg) alloys in physiological environments have limited their potential usage as next-generation biodegradable orthopedic implant materials. In this work, femtosecond laser shock peening
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a0c7c2a4e79fe3cc63cebfc6e651d28
https://pubmed.ncbi.nlm.nih.gov/35006771
https://pubmed.ncbi.nlm.nih.gov/35006771
We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high-k dielectric tantalum oxide encapsulated layer (a few nanometers thick) placed by atomic layer deposition on Si3N4. A low-noise level o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6ab91c97d93d9e77a2ce6f7c41ef83c
http://arxiv.org/abs/2103.14812
http://arxiv.org/abs/2103.14812
Publikováno v:
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII.
Driven by the strong need for cheap and integrable Si-based optoelectronic devices for a wide range of applications, continuing endeavors have been made to develop structures for light emission, modulation, and detection in this material system. Here
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0909c4f28ab9a0c50c1897294fd8804
https://doi.org/10.1117/12.2567850
https://doi.org/10.1117/12.2567850
Autor:
Leslie Howe, Yifei Wang, Prashant Pradhan, Michael Cooney, V. X. Ho, Zachary. N. Henschel, Nguyen Q. Vinh
Publikováno v:
Infrared Sensors, Devices, and Applications X.
Graphene-based photodetectors have attracted attention for realizing optoelectronic devices including photodetectors. We report a graphene field effect transistor on silicon for broadband light detection from the ultraviolet to near-infrared region,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8488a8afd437ad1f167daade01a5582a
https://doi.org/10.1117/12.2569035
https://doi.org/10.1117/12.2569035
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN epilayers p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c77409797ccf5d34bafeb521cae6005
Publikováno v:
MRS Advances. 2:135-140
We report the temperature dependence of Er optical centers in GaN epilayers prepared by metal-organic chemical vapor deposition under the resonant excitation (4I15/2 →4I9/2) excitation using a Ti:Sapphire laser (λexc = 809 nm). High resolution inf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f26c7e3a180e2a912a1b6032b9e196a
https://doi.org/10.1557/adv.2017.27
https://doi.org/10.1557/adv.2017.27
Publikováno v:
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2019.
Graphene-based photodetectors have attracted strong interest for realizing optoelectronic devices, including photodetectors. Here we report a simple fabrication of graphene-germanium quantum dots for broadband light detection from visible to infrared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::114bd68d05cb549301f02eb13cddd0a0
https://doi.org/10.1117/12.2529371
https://doi.org/10.1117/12.2529371
Publikováno v:
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz.
There are a growing number of applications demanding high sensitivity visible to mid-infrared photodetectors operating at room temperature. Graphene is ideally suitable for optoelectronic photodetectors sensitive from visible to mid-infrared frequenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::510aba0b14275e7e0c3a29504a0c9395
https://doi.org/10.1117/12.2320922
https://doi.org/10.1117/12.2320922