Výsledky vyhledávání - "V. Venkatachalapathy"

Akademický článek

Preparation of meta-stable phases of barium titanate by Sol-hydrothermal method

Autor: Mahalakshmi Selvaraj, V. Venkatachalapathy, J. Mayandi, S. Karazhanov, J. M. Pearce

Publikováno v: AIP Advances, Vol 5, Iss 11, Pp 117119-117119-10 (2015)

Two low-cost chemical methods of sol–gel and the hydrothermal process have been strategically combined to fabricate barium titanate (BaTiO3) nanopowders. This method was tested for various synthesis temperatures (100 °C to 250 °C) employing bariu

Externí odkaz: https://doaj.org/article/30803e5415744e22b98853ee4faee180

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Akademický článek

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A case of idiopathic chylous ascites

Autor: Adina Olaru, Suresh V Venkatachalapathy, Martin James, Nicolas Martinez-Calle

Publikováno v: Oxford Medical Case Reports. 2023

Chylous ascites is a rare condition found in 1 in 20 000 patients admitted to hospital with abdominal distention. It is caused by a limited number of pathologies but can, in rare situations, be idiopathic. Its management is difficult and usually invo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c5f4fbedbbee934e7e106159d05f05f3
https://doi.org/10.1093/omcr/omad009

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Akademický článek

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Akademický článek

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Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

Autor: S. B. Kjeldby, A. Azarov, P. D. Nguyen, V. Venkatachalapathy, R. Mikšová, A. Macková, A. Kuznetsov, Ø. Prytz, L. Vines

Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (β-Ga2O3) wafers, having [Formula: see text], (010), and (001) orientations, were studied by Rutherford backscattering spectrometry in channeling mode (RBS/c), x-ra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37b6a2fea916204a679ce48455a55954
http://hdl.handle.net/10852/100966

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Heavy metal oxide glasses and their optoelectronic applications (infrared transmission, luminescence, nonlinear optical susceptibilities, etc.)

Autor: S. Mahalakshmi, J. Mayandi, Suresh Sagadevan, P. Vajeeston, V. Venkatachalapathy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9dce9ca40e9ec291bed2f0b6c34d0d2b
https://doi.org/10.1016/b978-0-323-85824-3.00012-9

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Contributors

Autor: Marlinda Ab Rahman, Yasmin Binti Abdul Wahab, Shamsu Abubakar, Waqar Ahmed, Vinod Kumar Alam, Aiesha N. Albalawi, Hamad A. Al-Lohedan, Tanvir Arfin, Muhammad Asif, Muhammad Azhar, Ibrahim B. Bwatanglang, Murthy Chavali, Kamrun Nahar Fatema, Is Fatimah, M.A. Motalib Hossain, Toma Ibrahim, Nur Amalina Syahirah Mohd Idris, Shahla Imteyaz, Victorien Jeux, Mohd. Rafie Johan, Ahmed Lateef Khalaf, Estelle Léonard, J. Anita Lett, Hanbai Lyu, Zhong Ma, S. Mahalakshmi, J. Mayandi, Shahid Mehmood, Faruq Mohammad, Mohd Arif Mohd Sarjidan, Pareshkumar G. Moradeeya, Lakshmipathy Muthukrishnan, Muhammad Nihal Naseer, Prasanna Kumar Obulapuram, Won-Chun Oh, Pakorn Opaprakasit, Suriati Paiman, Lijia Pan, Xinyu Ping, Jiban Podder, Suresh Sagadevan, K. Tamizh Selvi, Mehmood Shahid, Yi Shi, Nor Azwadi Che Sidik, Noor Azrina Talik, Gregory Soon How Thien, P. Vajeeston, V. Venkatachalapathy, Mohd. Hanif Yaacob, Asad A. Zaidi, Yiqiang Zhan, Jing Zhang

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f3003169735902c43e533782b79298b
https://doi.org/10.1016/b978-0-323-85824-3.09992-9

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Tuning electrical properties in Ga2O3 polymorphs induced with ion beams

Autor: A. Y. Polyakov, А. I. Kochkova, A. Azarov, V. Venkatachalapathy, A. V. Miakonkikh, A. A. Vasilev, A. V. Chernykh, I. V. Shchemerov, A. A. Romanov, A. Kuznetsov, S. J. Pearton

Publikováno v: Journal of Applied Physics. 133:095701

Ion beam fabrication of metastable polymorphs of Ga2O3, assisted by the controllable accumulation of the disorder in the lattice, is an interesting alternative to conventional deposition techniques. However, the adjustability of the electrical proper

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f0e2d95bf3541ee4c279eee7c804156a
https://doi.org/10.1063/5.0133181

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