Zobrazeno 1 - 10
of 36
pro vyhledávání: '"V. V. Zatekin"'
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 17:363-367
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 16:402-407
Autor:
V.A. Skuratov, V. S. Kulikauskas, A. N. Tereshchenko, Dmitry A. Kiselev, A. N. Palagushkin, E. A. Steinman, A. A. Burmistrov, Vladimir Privezentsev, O. S. Zilova, V. V. Zatekin
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 83:1332-1339
The effect irradiation with swift heavy Xe ions at an energy of 167 MeV has on the structure and properties of a Zn-implanted SiO2 film is studied. The implantation of Zn ions is found to result in the formation of amorphous zinc nanoparticles around
Autor:
Yu. A. Agafonov, V. V. Zatekin, E. A. Steinman, V. S. Kulikauskas, V. K. Egorov, V. I. Zinenko, A. N. Tereshchenko, Vladimir Privezentsev, Kirill D. Shcherbachev
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:382-386
The surface layer of a SiO2/Si structure implanted with Zn+ and O+ ions and annealed in neutral and inert atmospheres is studied. At first, n-Si(100) silicon plates are oxidized in dry O2 to achieve an oxide-film thickness of 0.2 μm. Then, at room t
Autor:
Vladimir Privezentsev, A. V. Makunin, Vladimir A. Skuratov, E. A. Steinman, V. S. Kulikauskas, V. V. Zatekin, A. N. Palagushkin, Dmitry A. Kiselev, A. N. Tereshchenko
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:326-334
The formation of a zinc-oxide phase in a SiO2 film deposited onto n-type Si substrates grown in the (100) orientation using the Czochralski technique, which is a result of implanting 64Zn+ ions at room temperature, an energy of 50 keV, and a dose of
Autor:
E. P. Kirilenko, Vladimir Privezentsev, V. V. Zatekin, V. S. Kulikauskas, A. V. Goryachev, A. A. Batrakov
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 80:149-155
The results from visualizing the structure and identifying the composition of surface and the nearsurface layers of CZ n-Si (100) implanted by 64Zn+ ions with dose of 5 × 1016 cm–2 and energy of 50 keV under conditions of a substrate heated to 350
Autor:
E.V. Semenov, V. S. Koidan, V. S. Kulikauskas, S. T. Latushkin, S.N. Kornienko, V. N. Unezhev, V.M. Gureev, V.B. Petrov, V.G. Stolyarova, B.I. Khripunov, V. V. Zatekin, L. S. Danelyan, A.I. Ryazanov
Publikováno v:
Journal of Nuclear Materials. 463:258-262
Effect of radiation damage on tungsten response to plasma exposure is examined. Samples of tungsten W 99.95 wt% were irradiated with fast 12C3+ ions at 10 MeV to fluence of (1–2) × 1017 ion/cm2 to produce damage in the range 1–40 dpa relevant to
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:804-811
The results of studying the structure and composition of the surface layer of a Si plate after 64Zn+ ion implantation and thermal annealing in oxygen are presented. The ions are implanted into a substrate heated to a temperature of 400°C. Radiation
Autor:
V. V. Zatekin, A. A. Batrakov, V. S. Kulikauskas, Vladimir Privezentsev, D. V. Petrov, A. Yu. Trifonov
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:486-495
The cross section of a Si surface layer implanted with 64Zn+ and 16O+ ions is visualized via high-resolution transmission electron microscopy, and its evolution as a result of thermal annealing is investigated. The profiles of impurities implanted in
Autor:
A.S. Rupyshev, V. S. Koidan, V.M. Gureev, S.N. Kornienko, V. V. Zatekin, A.I. Ryazanov, V. S. Kulikauskas, E.V. Semenov, S. T. Latushkin, B.I. Khripunov
Publikováno v:
Physics Procedia. 71:63-67
The paper presents the development of experimental investigations and recent results of the impact on tungsten at high level of radiation damage under steady-state deuterium plasma. Tungsten is considered as a plasma facing material for a fusion reac