Zobrazeno 1 - 2
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pro vyhledávání: '"V. V. Varlachev"'
Autor:
I. I. Lebedev, D. E. Zolotykh, A. G. Naymushin, N. V. Smolnikov, M. N. Anikin, V. V. Varlachev
Publikováno v:
Atom Indonesia, Vol 47, Iss 1, Pp 39-44 (2021)
The IRT-T reactor has been conducting research in the field of irradiation of ingots of single-crystal semiconductor materials since 1987. The article describes the existing silicon doping facility. The results of studies on the possibility of creati
Externí odkaz:
https://doaj.org/article/0dd8c4fee0204e8b96da8b34bd04be00
Publikováno v:
Atom Indonesia, Vol 47, Iss 1, Pp 39-44 (2021)
The IRT-T reactor has been conducting research in the field of irradiation of ingots of single-crystal semiconductor materials since 1987. The article describes the existing silicon doping facility. The results of studies on the possibility of creati