Zobrazeno 1 - 10
of 21
pro vyhledávání: '"V. V. Travnikov"'
Publikováno v:
Nanotechnology. 17:5349-5354
We report on the effect of high temperature annealing on the reflection spectra of synthetic opals. The analysis of conditions for simultaneous diffraction on the (111) planes parallel and inclined to the sample surface has shown that both annealed a
Autor:
V. Kh. Kaĭbyshev, V. V. Travnikov
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 83:288-292
The low-temperature spectra of the exciton luminescence of the ZnCdSe/ZnSe quantum well grown in the [100] direction have been analyzed. It has been found that the observed radiation is linearly polarized in the well plane along either the [011] axis
Autor:
V. Kh. Kaĭbyshev, V. V. Travnikov
Publikováno v:
Semiconductors. 40:459-467
Spectra of excitonic luminescence of single-quantum-well ZnCdSe/ZnSe heterostructures at T = 8 K are investigated. Two types of linear-polarization anisotropy of the excitonic emission are revealed. The first type of anisotropy corresponds to the lum
Autor:
D. A. Kurdyukov, V. V. Travnikov, Valery G. Golubev, N. V. Sharenkova, A. V. Medvedev, A. V. Sel’kin, G. M. Gadzhiev, M. V. Zamoryanskaya, Alexander Mintairov, James L. Merz, Alexander B. Pevtsov
Publikováno v:
Semiconductors. 37:1400-1405
Nanocrystalline GaP and amorphous GaPN solid solution have been synthesized in voids of artificial opal. The opal-GaP and opal-GaPN composites obtained clearly demonstrate properties of photonic crystals. The reflection spectra of the opal-GaPN compo
Autor:
V. V. Travnikov, V. H. Kaibyshev
Publikováno v:
International Journal of Nanoscience. :479-485
Anomalous strong linear anisotropy of resonant Raman scattering in open ZnCdSe / ZnSe nanowires has been found. The anisotropy value is more than twice as that due to the anisotropy of exciton–photon interaction which is the characteristic for open
Publikováno v:
ResearcherID
Resonance Raman scattering (RS) spectra of a ZnCdSe/ZnSe sample containing a single quantum well and quantum well-based open nanowires were studied at T=300 K. The longitudinal optical (LO) phonons involved in the formation of the observed spectra of
Autor:
V. Kh. Kaibyshev, V. V. Travnikov
Publikováno v:
Physics of the Solid State. 45:1379-1387
Low-temperature (T ∼ 8 K) secondary emission spectra of open Zn0.87Cd0.13Se/ZnSe nanowires were studied comprehensively in the region of the ground excitonic state under tunable laser excitation. The spectra revealed a fine structure produced in th
Autor:
V. I. Skopina, Fritz Henneberger, N V Lomasov, M. Rabe, E M Tanklevskaya, Joachim Puls, S I Nesterov, V V Travnikov, V. H. Kaibyshev
Publikováno v:
Nanotechnology. 12:602-606
The fine structure and intensity of resonant exciton-phonon (REP) spectra in a Zn0.87Cd0.13Se/ZnSe single quantum well (QW) have been investigated in detail at tunable laser excitation in the energy region of ground ZnCdSe exciton state at 8?K. Obser
Autor:
V. I. Skopina, S. I. Nesterov, S. O. Kognovitskii, Fritz Henneberger, V. V. Travnikov, N. V. Lomasov, M. Rabe, S. A. Gurevich
Publikováno v:
Physics of the Solid State. 40:1413-1416
Linearly polarized luminescence spectra of bare (unburied) semiconductor structures with ZnCdSe/ZnSe quantum wires, obtained by reactive ion etching, were investigated. It was found that, regardless of the orientation of the linear polarization of th
Publikováno v:
Physics of the Solid State. 39:907-912
A study has been made of the effect of the additional generation of photoexcited electrons on the excitonic absorption and luminescence spectra of ultrapure GaAs samples at T=2 K. The observed increase in the absorption coefficient for the ground (n=