Zobrazeno 1 - 10
of 17
pro vyhledávání: '"V. V. Shchennikov"'
Publikováno v:
Acta Physica Polonica A. 124:244-249
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a553345e7ea30bfdb3467d6f3dd67d34
https://doi.org/10.12693/aphyspola.124.244
https://doi.org/10.12693/aphyspola.124.244
Autor:
Igor V. Korobeynikov, Vsevolod V. Shchennikov, Sergey V. Ovsyannikov, Sergey V. Streltsov, V. V. Shchennikov
Publikováno v:
Journal of Electronic Materials. 42:2249-2256
The thermoelectric properties of silicon in its high-pressure and metastable (upon decompression) phases in the pressure range up to ∼25 GPa were investigated. Experimental data were obtained using designed high-pressure cells with sintered diamond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a5b7cc7858fb140590b1d9e3ad672cb
https://doi.org/10.1007/s11664-013-2602-3
https://doi.org/10.1007/s11664-013-2602-3
Autor:
A. P. Byrkin, V. V. Shchennikov
Publikováno v:
TsAGI Science Journal. 40:167-190
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08256f134d1a5d8f0718efaec4ece36f
https://doi.org/10.1615/tsagiscij.v40.i2.30
https://doi.org/10.1615/tsagiscij.v40.i2.30
Autor:
S. Kagoshima, R. Kondo, N. Matsushita, S. V. Ovsyannikov, N. A. Shaidarova, V. V. Shchennikov
Publikováno v:
Journal of Low Temperature Physics. 142:409-412
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b1ce76ebefa45d804758ff6673940ef
https://doi.org/10.1007/bf02679532
https://doi.org/10.1007/bf02679532
Publikováno v:
Technical Physics Letters. 30:328-331
We have studied the electrical and galvanomagnetic properties of p-PbSe single crystals irradiated with fast neutrons. Changes in the temperature dependence of the resistivity and the Hall constant show evidence of the metal-semiconductor electron tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec539dfa2b13a0d6316090c638870953
https://doi.org/10.1134/1.1748615
https://doi.org/10.1134/1.1748615
Autor:
S. V. Ovsyannikov, V. V. Shchennikov, I. A. Komarovskii, G. V. Vorontsov, I. V. Korobeynikov, V. V. Shchennikov, Jr.
Publikováno v:
SPIE Proceedings.
The recent progress in creation of materials with negative refractive index inaccessible for natural substances show all-important role of the multi-phase materials in modern technology. In the present work the approach for calculating of effective p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d723b378c7e7bc50e610e4d8f52541ca
https://doi.org/10.1117/12.881913
https://doi.org/10.1117/12.881913
Publikováno v:
Scopus-Elsevier
The resistivity ρ and the Hall constant R for the HgTe1−x Sx (0.04≤x≤0.6) crystals have been investigated in the temperature range 4.2–350 K in the magnetic fields B up to 14 T. The pressure dependences of the resistivity ρ have been measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b05c25f77fdeef6d3dd3c30026627177
https://doi.org/10.1134/1.1131149
https://doi.org/10.1134/1.1131149
Autor:
Vsevolod V. Shchennikov, Igor V. Korobeynikov, Natalia V. Morozova, V. V. Shchennikov, Sergey V. Streltsov, Sergey V. Ovsyannikov
Publikováno v:
SPIE Proceedings.
In the present work the technique of the high-pressure thermoelectric (TE) investigation has been developed for the phase transition recording at Si and the values of thermopower (S) for the different high pressure and metastable phases of Si have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e1ad186d33b380312073a14f2942503
https://doi.org/10.1117/12.2007724
https://doi.org/10.1117/12.2007724
Publikováno v:
Physics of the Solid State. 42:1228-1230
The electrical resistance ρ and thermopower S of the (PbS)0.59TiS2 single-crystal compound with mismatched layers and the TiS2 crystals have been investigated at room temperature in high-pressure chambers with synthetic diamond dies. The decrease in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49f5c9ffedfa8f7496f85557585a2c59
https://doi.org/10.1134/1.1131368
https://doi.org/10.1134/1.1131368
Publikováno v:
Physics of the Solid State. 42:431-433
A study is reported on the temperature dependence of the resistivity of the (PbS)0.59TiS2 misfit-layer compound in the commensurate and incommensurate basal-plane directions. The effect of the lattice incommensurability is shown to be equivalent to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcca077a8f8981a2e801e66a34037ddb
https://doi.org/10.1134/1.1131225
https://doi.org/10.1134/1.1131225