Zobrazeno 1 - 10
of 19
pro vyhledávání: '"V. V. Saraikin"'
The Energy State of Epitaxial Layers in a Multilayer Heterostructure, Grown on a (001)GaAs Substrate
Autor:
A. S. Bugaev, Igor Shchetinin, N. Yu. Tabachkova, Olena Ruban, V. V. Saraikin, Andrey N. Aleshin
Publikováno v:
Crystallography Reports. 65:138-146
It is shown based on the structural analysis by reciprocal space mapping and the experimental secondary ion mass spectrometry and transmission electron microscopy data that, along with lateral compressive stress, vertical compressive stress is induce
Autor:
N. Yu. Tabachkova, A. S. Bugaev, V. V. Saraikin, Igor Shchetinin, Olena Ruban, Andrey N. Aleshin
Publikováno v:
Semiconductors. 53:1066-1074
On the basis of data on X-ray structural analysis performed by the method of reciprocal-space mapping and investigations using secondary-ion mass spectrometry and transmission electron microscopy, it is shown that vertical compressive stresses also a
Publikováno v:
Semiconductors. 50:1548-1553
A stack of five elastically strained metastable GeSn layers with a thickness of 200 nm each separated by Ge spacer layers with a thickness of 20 nm is grown on a (001) Si/Ge virtual substrate. The molar fraction of Sn in the GeSn layers is 0.005, 0.0
Publikováno v:
Crystallography Reports. 57:903-908
The transformation of the structure of a radiation-damaged silicon layer and profiles of implanted dopant Zn during thermal annealings has been investigated. The analysis was performed by Rutherford back-scattering spectroscopy, secondary-ion mass sp
Autor:
L. A. Balagurov, A. F. Orlov, Yu. A. Agafonov, A. D. Rubacheva, E. A. Gan’shina, V. V. Saraikin, I. V. Kulemanov, V. I. Zinenko, N. S. Perov, Anna Semisalova
Publikováno v:
Physics of the Solid State. 54:283-286
Magnetic and magnetooptical properties of the Cr-doped GaN layers have been investigated in the temperature range 50–400 K. A high saturation magnetization of 25 G has been observed in the obtained material. Spectra of the magnetooptical transversa
Autor:
I. V. Kulemanov, V. V. Saraikin, L. A. Balagurov, A. F. Orlov, A. V. Kartavykh, Yu. A. Agafonov, Yu. N. Parkhomenko, V. I. Zinenko
Publikováno v:
Semiconductors. 44:28-31
Profiles of impurity distribution and spreading resistance have been studied in the layers of ferromagnetic silicon obtained by implantation of Mn (or Co). Standard wafers of n- and p-Si with a high or low electrical conductivity were implanted with
Autor:
V. V. Saraikin, Yu. A. Agafonov, Andrei Rogalev, L. A. Balagurov, A. F. Orlov, V. I. Zinenko, K. D. Shcherbachev, I. V. Kulemanov, E. A. Gan’shina, Alexander Granovsky, Yu. N. Parkhomenko, V. I. Vdovin, Andrei V. Sapelkin, A. Smekhova, A. V. Kartavykh, N. S. Perov, V. T. Bublik
Publikováno v:
Journal of Experimental and Theoretical Physics. 109:602-608
The structure and the electrical and magnetic properties of Mn-implanted Si, which exhibits ferromagnetic ordering at room temperature, are studied. Single-crystal n- and p-type Si wafers with high and low electrical resistivities are implanted by ma
Autor:
I. S. Vasil’evskii, G. V. Ganin, Andrey A. Lomov, M. A. Chuev, Imamov Rafik M, V. V. Saraikin, E. A. Klimov, V. G. Mokerov, G. B. Galiev
Publikováno v:
Russian Microelectronics. 34:78-87
Double quantum wells in the form of an AlGaAs/GaAs/AlGaAs heterostructure with an AlAs barrier a few monolayers thick are fabricated by MBE. Their structural and compositional characterization is carried out by double-crystal XRD and SIMS. Electron m
Autor:
M. A. Chuev, G. B. Galiev, E. A. Klimov, V. V. Saraikin, A. M. Afanas'ev, V. G. Mokerov, Andrey A. Lomov, Imamov Rafik M
Publikováno v:
Russian Microelectronics. 32:158-164
An AlxGa1 – xAs/GaAs/AlxGa1 – xAs double quantum well with a thin AlAs interwell barrier is examined by SIMS and double-crystal XRD for an AlAs thickness of about 10 or 18 A. Thickness and other structural parameters are determined for each layer
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
In recent years silicon doping aimed at ultrashallow p-n junction formation is very often performed at low temperatures. This work shows that films condensed in the solid phase from gas molecules of the residual atmosphere in the implantation chamber