Výsledky vyhledávání

Method research and developing a method to control directed semiconductor crystallization in space

Autor: V.I. Folomeev, I.I. Maronchuk, A.V. Egorov, V.P. Ginkin, V. V. Rakov, A. V. Kartavykh, T.M. Lukhanova

Publikováno v: Journal of Crystal Growth. 236:551-556

A system and procedure for simultaneously monitoring temperatures along the melt and crystal axis, those on the external surface of the quartz ampoule and in various elements of the “Polyzone” facility's thermal unit have been developed. A detail

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f18661c790f0241ef3ccdaf879010853
https://doi.org/10.1016/s0022-0248(02)00865-5

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The mechanism of Marangoni convection influence on dopant distribution in Ge space-grown single crystals

Autor: V. V. Rakov, V.I. Folomeev, V.P. Ginkin, M. G. Mil’vidskii, A. V. Kartavykh, V.K. Artemyev

Publikováno v: Journal of Crystal Growth. 223:29-37

A direct numerical simulation of heat mass transfer processes in the melt under the influence of surface tension forces on free surfaces during germanium crystal growth by the floating zone (FZ) method under microgravity conditions is performed. Deve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::66def91dc0841f1dbad45380537d60f3
https://doi.org/10.1016/s0022-0248(00)00981-7

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Anomalous effects in dopant distribution in Ge single crystals grown by the floating zone technique aboard spacecrafts

Autor: E. S. Kopeliovich, V. V. Rakov, M. G. Mil’vidskii, A. V. Kartavykh

Publikováno v: Scopus-Elsevier

Specific features of Ga-dopant distribution in Ge single crystals grown by the floating zone technique from lightly and heavily Ga-doped Ge melts aboard the Photon spacecrafts have been studied. An anomalously strong concentration dependence of the e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8982578dfb062c6e0b4036d4abadd3c
https://doi.org/10.1134/1.171156

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Anomalous effects of dopant distribution in Ge single crystals grown by FZ-technique aboard spacecrafts

Autor: A. V. Kartavykh, E. S. Kopeliovich, M. G. Mil’vidskii, V. V. Rakov

Publikováno v: Journal of Crystal Growth. 205:497-502

The gallium distribution in nine germanium single crystals, all grown with similar heat conditions using the floating zone (FZ) method aboard five unmanned “Photon” spacecrafts (SC), from melts doped from 1×10 18 to 1×10 20 at/cm 3 are studied.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e601c2c97c37b59c7e53b1523e47105
https://doi.org/10.1016/s0022-0248(99)00225-0

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Creating standard resistors based on germanium and silicon single crystals grown under microgravity conditions

Autor: A. V. Kartavykh, V. V. Rakov

Publikováno v: Technical Physics Letters. 32:990-992

Requirements on the creation of standard resistors (SRs), which are necessary for the calibration of microprobe complexes used for the diagnostics of electrical homogeneity of single crystal semiconductors, are considered. SR prototypes have been cre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::23fc2b3019995c1b53ec6886a9d0a65e
https://doi.org/10.1134/s1063785006110253

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[Untitled]

Autor: M. G. Mil’vidskii, E. S. Kopeliovich, A. V. Kartavykh, V. V. Rakov

Publikováno v: Instruments and Experimental Techniques. 44:100-102

By using a method for testing the microgravity conditions aboard the orbital station (OS) proposed by the authors, different effects of the main OS orbital modes on crucibleless melting and heat-transfer processes in Ge melts were revealed. Even a mi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6ace24b360dc419be6a12340f7af20ac
https://doi.org/10.1023/a:1004145403550

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